Van der Waals Heteroepitaxy of Air-Stable Quasi-Free-Standing Silicene Layers on CVD Epitaxial Graphene/6H-SiC.
2D materials
graphene
kinetic Monte Carlo
molecular beam epitaxy
nucleation and growth
silicene
van der Waals heterostructure
Journal
ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589
Informations de publication
Date de publication:
26 Apr 2022
26 Apr 2022
Historique:
pubmed:
17
3
2022
medline:
17
3
2022
entrez:
16
3
2022
Statut:
ppublish
Résumé
Graphene, consisting of an inert, thermally stable material with an atomically flat, dangling-bond-free surface, is by essence an ideal template layer for van der Waals heteroepitaxy of two-dimensional materials such as silicene. However, depending on the synthesis method and growth parameters, graphene (Gr) substrates could exhibit, on a single sample, various surface structures, thicknesses, defects, and step heights. These structures noticeably affect the growth mode of epitaxial layers,
Identifiants
pubmed: 35294163
doi: 10.1021/acsnano.1c11122
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM