Interface Formation during the Growth of Phase Change Material Heterostructures Based on Ge-Rich Ge-Sb-Te Alloys.
Ge-rich Ge-Sb-Te alloys
PCM
electronic properties
heterostructures
Journal
Nanomaterials (Basel, Switzerland)
ISSN: 2079-4991
Titre abrégé: Nanomaterials (Basel)
Pays: Switzerland
ID NLM: 101610216
Informations de publication
Date de publication:
18 Mar 2022
18 Mar 2022
Historique:
received:
08
02
2022
revised:
10
03
2022
accepted:
15
03
2022
entrez:
26
3
2022
pubmed:
27
3
2022
medline:
27
3
2022
Statut:
epublish
Résumé
In this study, we present a full characterization of the electronic properties of phase change material (PCM) double-layered heterostructures deposited on silicon substrates. Thin films of amorphous Ge-rich Ge-Sb-Te (GGST) alloys were grown by physical vapor deposition on Sb
Identifiants
pubmed: 35335820
pii: nano12061007
doi: 10.3390/nano12061007
pmc: PMC8949867
pii:
doi:
Types de publication
Journal Article
Langues
eng
Subventions
Organisme : European Union
ID : 824957
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