Mapping 1D Confined Electromagnetic Edge States in 2D Monolayer Semiconducting MoS

2D materials 4D-STEM MoS2 TEM edges

Journal

ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589

Informations de publication

Date de publication:
26 Apr 2022
Historique:
pubmed: 29 3 2022
medline: 29 3 2022
entrez: 28 3 2022
Statut: ppublish

Résumé

Four-dimensional (4D) scanning transmission electron microscopy is used to study the electric fields at the edges of 2D semiconducting monolayer MoS

Identifiants

DOI: 10.1021/acsnano.2c01170 PMID: 35344654
pubmed: 35344654
doi: 10.1021/acsnano.2c01170
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

6657-6665

Auteurs

Yi Wen (Y)

Department of Materials, University of Oxford, 16 Parks Road, Oxford OX1 3PH, United Kingdom.

Shiang Fang (S)

Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States.

Matthew Coupin (M)

Materials Graduate Program, Texas Materials Institute, The University of Texas at Austin, 204 E Dean Keeton Street, Austin, Texas 78712, United States.

Yang Lu (Y)

Department of Materials, University of Oxford, 16 Parks Road, Oxford OX1 3PH, United Kingdom.

Colin Ophus (C)

National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, United States.

Efthimios Kaxiras (E)

Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States.
John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States.

Jamie H Warner (JH)

Materials Graduate Program, Texas Materials Institute, The University of Texas at Austin, 204 E Dean Keeton Street, Austin, Texas 78712, United States.
Walker Department of Mechanical Engineering, The University of Texas at Austin, 204 E Dean Keeton Street, Austin, Texas 78712, United States.
ORCID: 0000-0002-1271-2019

Classifications MeSH