Broadband, Ultra-High-Responsive Monolayer MoS

0D/2D CVD SnS2-QDs/MoS2 broadband photodetector heterojunction monolayer MoS2

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
06 Apr 2022
Historique:
pubmed: 30 3 2022
medline: 30 3 2022
entrez: 29 3 2022
Statut: ppublish

Résumé

Atomically thin two-dimensional (2D) materials have gained significant attention from the research community in the fabrication of high-performance optoelectronic devices. Even though there are various techniques to improve the responsivity of the photodetector, the key factor limiting the performance of the photodetectors is constrained photodetection spectral range in the electromagnetic spectrum. In this work, a mixed-dimensional 0D/2D SnS

Identifiants

pubmed: 35347994
doi: 10.1021/acsami.2c02624
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

15415-15425

Auteurs

Chandra Sekhar Reddy Kolli (CSR)

Cinvestav Unidad Querétaro, Santiago de Querétaro 76230, Mexico.

Venkatarao Selamneni (V)

Department of Electrical and Electronics Engineering, BITS Pilani Hyderabad Campus, Hyderabad 500078, India.

Barbara A Muñiz Martínez (B)

Cinvestav Unidad Querétaro, Santiago de Querétaro 76230, Mexico.

Andres Fest Carreno (A)

Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.

David Emanuel Sanchez (D)

Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.

Mauricio Terrones (M)

Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.

Elodie Strupiechonski (E)

CONACYT-Cinvestav Unidad Queret́aro, Santiago de Querétaro 76230, Mexico.

Andres De Luna Bugallo (A)

Departamento de Nanotecnología, Centro de Física Aplicada y Tecnología Avanzada, Universidad Nacional Autónoma de México, Santiago de Querétaro CP 76000, Mexico.

Parikshit Sahatiya (P)

Department of Electrical and Electronics Engineering, BITS Pilani Hyderabad Campus, Hyderabad 500078, India.
Materials Center for Sustainable Energy & Environment, Birla Institute of Technology and Science Pilani, Hyderabad Campus, Hyderabad 500078, India.

Classifications MeSH