Ultrafast Thermalization Pathways of Excited Bulk and Surface States in the Ferroelectric Rashba Semiconductor GeTe.
Rashba effect
ferroelectric semiconductors
spin- and angle-resolved photoemission
spin-orbit coupling
time-resolved photoemission
ultrafast dynamics
Journal
Advanced materials (Deerfield Beach, Fla.)
ISSN: 1521-4095
Titre abrégé: Adv Mater
Pays: Germany
ID NLM: 9885358
Informations de publication
Date de publication:
Jun 2022
Jun 2022
Historique:
revised:
22
03
2022
received:
11
01
2022
pubmed:
8
4
2022
medline:
8
4
2022
entrez:
7
4
2022
Statut:
ppublish
Résumé
A large Rashba effect is essential for future applications in spintronics. Particularly attractive is understanding and controlling nonequilibrium properties of ferroelectric Rashba semiconductors. Here, time- and angle-resolved photoemission is utilized to access the ultrafast dynamics of bulk and surface transient Rashba states after femtosecond optical excitation of GeTe. A complex thermalization pathway is observed, wherein three different timescales can be clearly distinguished: intraband thermalization, interband equilibration, and electronic cooling. These dynamics exhibit an unconventional temperature dependence: while the cooling phase speeds up with increasing sample temperature, the opposite happens for interband thermalization. It is demonstrated how, due to the Rashba effect, an interdependence of these timescales on the relative strength of both electron-electron and electron-phonon interactions is responsible for the counterintuitive temperature dependence, with spin-selection constrained interband electron-electron scatterings found both to dominate dynamics away from the Fermi level, and to weaken with increasing temperature. These findings are supported by theoretical calculations within the Boltzmann approach explicitly showing the opposite behavior of all relevant electron-electron and electron-phonon scattering channels with temperature, thus confirming the microscopic mechanism of the experimental findings. The present results are important for future applications of ferroelectric Rashba semiconductors and their excitations in ultrafast spintronics.
Identifiants
pubmed: 35388556
doi: 10.1002/adma.202200323
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
e2200323Subventions
Organisme : Nanyang Technological University
Organisme : Austrian Science Fund FWF
ID : P 30960
Pays : Austria
Organisme : Austrian Science Fund
ID : P30960-N27
Organisme : Austrian Science Fund
ID : I 4493-N
Organisme : Impuls- und Vernetzungsfonds der Helmholtz-Gemeinschaft
ID : HRSF-0067
Informations de copyright
© 2022 The Authors. Advanced Materials published by Wiley-VCH GmbH.
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