Comparing three quantification methods on N/Si ratio analysis using electron energy loss spectroscopy (EELS).
3D NAND
EELS
Fourier-log deconvolution
Jump ratio
Quantitative composition analysis
STEM
Journal
Micron (Oxford, England : 1993)
ISSN: 1878-4291
Titre abrégé: Micron
Pays: England
ID NLM: 9312850
Informations de publication
Date de publication:
Jun 2022
Jun 2022
Historique:
received:
25
01
2022
revised:
23
03
2022
accepted:
26
03
2022
pubmed:
8
4
2022
medline:
8
4
2022
entrez:
7
4
2022
Statut:
ppublish
Résumé
Precision elemental analysis by EELS at a nano-meter scale is a desirable goal for industrial application, as well as basic scientific research on advanced material analysis. However, sample thickness variation leads to a systematic error in element quantification due to electron plural scattering events and prevents it to be a useful quantitative analytic method. In this paper, we compared three methods to minimize thickness effect: Fourier-log deconvolution, Jump ratio, and Si K-edge by quantifying the N/Si ratio versus different thickness on a standard Si
Identifiants
pubmed: 35390752
pii: S0968-4328(22)00059-2
doi: 10.1016/j.micron.2022.103263
pii:
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
103263Informations de copyright
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