Quad-Level Cell Switching with Excellent Reliability in TiN/AlOx:Ti/TaOx/TiN Memory Device.
ISPP
QLC
ReRAM
resistive switching
Journal
Materials (Basel, Switzerland)
ISSN: 1996-1944
Titre abrégé: Materials (Basel)
Pays: Switzerland
ID NLM: 101555929
Informations de publication
Date de publication:
24 Mar 2022
24 Mar 2022
Historique:
received:
04
02
2022
revised:
11
03
2022
accepted:
21
03
2022
entrez:
12
4
2022
pubmed:
13
4
2022
medline:
13
4
2022
Statut:
epublish
Résumé
TiN/AlOx:Ti/TaOx/TiN memory devices using bilayer resistive switching memory demonstrated excellent durability and capability of QLC (quad-level cell) memory devices. The best nonvolatile memory characteristics with the lowest operation current and optimized 4 bit/cell states were obtained using the Incremental Step Pulse Programming (ISPP) algorithm in array. As a result, a superior QLC reliability (cycle endurance > 1 k at each level of the QLC, data retention > 2 h at 125 °C) for all the 4 bits/cell operations was achieved in sub-μm scaled RRAM (resistive random access memory) devices.
Identifiants
pubmed: 35407734
pii: ma15072402
doi: 10.3390/ma15072402
pmc: PMC8999717
pii:
doi:
Types de publication
Journal Article
Langues
eng
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