Alternating Current Field Effects in Atomically Ferroelectric Ultrathin Films.

domain pattern electric field ferroelectrics phase-field method thin films

Journal

Materials (Basel, Switzerland)
ISSN: 1996-1944
Titre abrégé: Materials (Basel)
Pays: Switzerland
ID NLM: 101555929

Informations de publication

Date de publication:
29 Mar 2022
Historique:
received: 14 02 2022
revised: 17 03 2022
accepted: 22 03 2022
entrez: 12 4 2022
pubmed: 13 4 2022
medline: 13 4 2022
Statut: epublish

Résumé

In this work, atomically K

Identifiants

pubmed: 35407839
pii: ma15072506
doi: 10.3390/ma15072506
pmc: PMC8999760
pii:
doi:

Types de publication

Journal Article

Langues

eng

Subventions

Organisme : National Natural Science Foundation of China
ID : 52074246

Références

Science. 2004 Oct 22;306(5696):666-9
pubmed: 15499015
Sci Adv. 2021 Jun 2;7(23):
pubmed: 34078600
Science. 1951 May 25;113(2943):591-6
pubmed: 14845674
Nature. 2021 Apr;592(7854):359-360
pubmed: 33854245
Nat Mater. 2007 Apr;6(4):296-302
pubmed: 17351615
Chem Rev. 2021 May 26;121(10):6124-6172
pubmed: 33909415
Materials (Basel). 2011 Feb 16;4(2):417-447
pubmed: 28879998
Science. 2007 Feb 16;315(5814):954-9
pubmed: 17303745

Auteurs

Jinming Cao (J)

School of Materials Science and Engineering, North University of China, Taiyuan 030051, China.

Mengxia Liu (M)

School of Materials Science and Engineering, North University of China, Taiyuan 030051, China.

Zhonglei Liu (Z)

School of Materials Science and Engineering, North University of China, Taiyuan 030051, China.

Hua Hou (H)

School of Materials Science and Engineering, North University of China, Taiyuan 030051, China.
School of Materials Science and Engineering, Taiyuan University of Science and Technology, Taiyuan 030024, China.

Yuhong Zhao (Y)

School of Materials Science and Engineering, North University of China, Taiyuan 030051, China.

Classifications MeSH