Strain-Free Layered Semiconductors for 2D Transistors with On-State Current Density Exceeding 1.3 mA μm

2D semiconductor Bismuth oxyselenide free-standing growth high mobility high on-state current density

Journal

Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070

Informations de publication

Date de publication:
11 May 2022
Historique:
pubmed: 26 4 2022
medline: 26 4 2022
entrez: 25 4 2022
Statut: ppublish

Résumé

High-mobility and air-stable two-dimensional (2D) Bi

Identifiants

DOI: 10.1021/acs.nanolett.2c00820 PMID: 35467885
pubmed: 35467885
doi: 10.1021/acs.nanolett.2c00820
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

3770-3776

Auteurs

Congwei Tan (C)

Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
ORCID: 0000-0002-6701-2773

Jianfeng Jiang (J)

Key Laboratory for the Physics and Chemistry of Nanodevices and School of Electronics, Peking University, Beijing 100871, China.

Jingyue Wang (J)

Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.

Mengshi Yu (M)

Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.

Teng Tu (T)

Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.

Xiaoyin Gao (X)

Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
Division of G-Device Technology, Beijing Graphene Institute, Beijing 100095, China.

Junchuan Tang (J)

Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.

Congcong Zhang (C)

Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.

Yichi Zhang (Y)

Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.

Xuehan Zhou (X)

Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.

Liming Zheng (L)

Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
Division of G-Device Technology, Beijing Graphene Institute, Beijing 100095, China.

Chenguang Qiu (C)

Key Laboratory for the Physics and Chemistry of Nanodevices and School of Electronics, Peking University, Beijing 100871, China.

Hailin Peng (H)

Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
Division of G-Device Technology, Beijing Graphene Institute, Beijing 100095, China.
ORCID: 0000-0003-1569-0238

Classifications MeSH