Band offset engineering at C
Journal
RSC advances
ISSN: 2046-2069
Titre abrégé: RSC Adv
Pays: England
ID NLM: 101581657
Informations de publication
Date de publication:
13 Apr 2022
13 Apr 2022
Historique:
received:
09
02
2022
accepted:
11
04
2022
entrez:
28
4
2022
pubmed:
29
4
2022
medline:
29
4
2022
Statut:
epublish
Résumé
Stacking layered two-dimensional materials in a type-II band alignment block has provided a high-performance method in photocatalytic water-splitting technology. The key parameters in such heterostructure configurations are the valence and conduction band offsets at the interface, which determine the device performance. Here, based on density functional theory calculations, the bandgap and band offsets at C
Identifiants
pubmed: 35481105
doi: 10.1039/d2ra00847e
pii: d2ra00847e
pmc: PMC9019558
doi:
Types de publication
Journal Article
Langues
eng
Pagination
12068-12077Informations de copyright
This journal is © The Royal Society of Chemistry.
Déclaration de conflit d'intérêts
There are no conflicts to declare.
Références
Adv Mater. 2016 Dec;28(48):10664-10672
pubmed: 27740690
Chemphyschem. 2016 Jul 4;17(13):2100-4
pubmed: 27110945
Nat Commun. 2015 Mar 06;6:6486
pubmed: 25744355
J Comput Chem. 2006 Nov 30;27(15):1787-99
pubmed: 16955487
Phys Chem Chem Phys. 2020 Nov 14;22(42):24446-24454
pubmed: 33084701
Appl Surf Sci. 2021 Jan 15;536:147945
pubmed: 33012933
Phys Chem Chem Phys. 2020 Aug 7;22(29):16691-16700
pubmed: 32658242
Phys Chem Chem Phys. 2020 Jul 7;22(25):14088-14098
pubmed: 32542278
ACS Appl Mater Interfaces. 2018 May 23;10(20):17419-17426
pubmed: 29706066
J Phys Chem Lett. 2020 Jun 4;11(11):4503-4510
pubmed: 32419458
J Phys Chem Lett. 2019 Feb 7;10(3):540-547
pubmed: 30649889
Opt Express. 2018 Mar 5;26(5):5342-5357
pubmed: 29529738
Nat Nanotechnol. 2017 May;12(5):441-446
pubmed: 28192390
Adv Sci (Weinh). 2020 Nov 10;7(24):2002697
pubmed: 33344136
Phys Rev Lett. 1996 Oct 28;77(18):3865-3868
pubmed: 10062328
Phys Chem Chem Phys. 2017 Oct 25;19(41):28216-28224
pubmed: 29026907