Artificial Synapses Based on WSe

WSe2 artificial synapse homojunction vacancies migration

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
11 May 2022
Historique:
pubmed: 29 4 2022
medline: 29 4 2022
entrez: 28 4 2022
Statut: ppublish

Résumé

Artificial synapses based on two-dimensional (2D) transition metal dichalcogenides (TMDs) materials have attracted wide attention to boost the development of neuromorphic computing in recent years. Various structures have been adopted to build 2D-material-based artificial synapses. In lateral- and vertical-structures, the realization of synaptic function mainly results from the migration of the defects and vacancies, which requires the strong ion diffusion ability. Here, we successfully demonstrate an artificial synapse based on lateral WSe

Identifiants

pubmed: 35481365
doi: 10.1021/acsami.2c01162
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

21141-21149

Auteurs

Junwen Ren (J)

School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.

Hongzhi Shen (H)

School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.

Zeyi Liu (Z)

School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.

Ming Xu (M)

School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.

Dehui Li (D)

School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.

Classifications MeSH