Moiré Modulation of Van Der Waals Potential in Twisted Hexagonal Boron Nitride.

atomic force microscopy hexagonal boron nitride layered materials mechanical phase imaging moiré superlattices van der Waals interactions

Journal

ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589

Informations de publication

Date de publication:
24 May 2022
Historique:
pubmed: 30 4 2022
medline: 30 4 2022
entrez: 29 4 2022
Statut: ppublish

Résumé

When a twist angle is applied between two layered materials (LMs), the registry of the layers and the associated change in their functional properties are spatially modulated, and a moiré superlattice arises. Several works explored the optical, electric, and electromechanical moiré-dependent properties of such twisted LMs but, to the best of our knowledge, no direct visualization and quantification of van der Waals (vdW) interlayer interactions has been presented, so far. Here, we use tapping mode atomic force microscopy phase-imaging to probe the spatial modulation of the vdW potential in twisted hexagonal boron nitride. We find a moiré superlattice in the phase channel only when noncontact (long-range) forces are probed, revealing the modulation of the vdW potential at the sample surface, following AB and BA stacking domains. The creation of scalable electrostatic domains, modulating the vdW potential at the interface with the environment by means of layer twisting, could be used for local adhesion engineering and surface functionalization by affecting the deposition of molecules or nanoparticles.

Identifiants

pubmed: 35486712
doi: 10.1021/acsnano.1c11107
pmc: PMC9134503
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

7589-7604

Auteurs

Stefano Chiodini (S)

Center for Nano Science and Technology, Fondazione Istituto Italiano di Tecnologia, Via G. Pascoli 70, Milan 20133, Italy.

James Kerfoot (J)

Cambridge Graphene Centre, University of Cambridge, 9, JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom.

Giacomo Venturi (G)

Center for Nano Science and Technology, Fondazione Istituto Italiano di Tecnologia, Via G. Pascoli 70, Milan 20133, Italy.
Physics Department, Politecnico Milano, P.zza Leonardo Da Vinci 32, Milan 20133, Italy.

Sandro Mignuzzi (S)

Cambridge Graphene Centre, University of Cambridge, 9, JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom.

Evgeny M Alexeev (EM)

Cambridge Graphene Centre, University of Cambridge, 9, JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom.

Bárbara Teixeira Rosa (B)

Cambridge Graphene Centre, University of Cambridge, 9, JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom.

Sefaattin Tongay (S)

School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States.

Takashi Taniguchi (T)

International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.

Kenji Watanabe (K)

Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.

Andrea C Ferrari (AC)

Cambridge Graphene Centre, University of Cambridge, 9, JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom.

Antonio Ambrosio (A)

Center for Nano Science and Technology, Fondazione Istituto Italiano di Tecnologia, Via G. Pascoli 70, Milan 20133, Italy.

Classifications MeSH