Layered Si-Ti oxide thin films with tailored electrical and optical properties by catalytic tandem MLD-ALD.


Journal

RSC advances
ISSN: 2046-2069
Titre abrégé: RSC Adv
Pays: England
ID NLM: 101581657

Informations de publication

Date de publication:
28 Oct 2021
Historique:
received: 08 09 2021
accepted: 22 10 2021
entrez: 2 5 2022
pubmed: 3 5 2022
medline: 3 5 2022
Statut: epublish

Résumé

Oxides with well-controlled optical and electrical properties are key for numerous advances in nanotechnology, including energy, catalysis, sensors, and device applications. In this study we introduce layer-by-layer deposition of silicon-titanium layered oxide (Si-Ti LO) thin films using combined MLD-ALD methodology (M/ALD). The Si-Ti LO film deposition is achieved by acid-base catalysis establishing an overall catalytic tandem M/ALD super cycle (CT-M/ALD). The catalytic nature of the process allows relatively fast deposition cycles under mild conditions compared with the typical cycle time and conditions required for ALD processes with silane precursors. The Si-Ti LO thin films exhibit tuneable refractive index and electrical conductivities. The refractive index is set by the stoichiometry of Si- to Ti-oxide phases simply by selecting the MLD to ALD proportion in the CT-M/ALD super cycle, with low and high refractive index, respectively. Thermal treatment of Si-Ti LO thin films resulted in conductive thin films with both graphitic and Magnéli oxide phases. Enhanced conductivity and reduced onset temperature for Magnéli phase formation were obtained owing to the unique Si-Ti layer structure and stoichiometry attained by the CT-M/ALD process and facilitated by breaking of Si-C bonds and Red-Ox reactions between the Si sub-oxide and TiO

Identifiants

pubmed: 35493179
doi: 10.1039/d1ra06764h
pii: d1ra06764h
pmc: PMC9042836
doi:

Types de publication

Journal Article

Langues

eng

Pagination

35099-35109

Informations de copyright

This journal is © The Royal Society of Chemistry.

Déclaration de conflit d'intérêts

The authors declare that they have no conflict of interest.

Références

Langmuir. 2012 Aug 21;28(33):12245-55
pubmed: 22817104
Angew Chem Int Ed Engl. 2008;47(33):6177-9
pubmed: 18618880
Science. 1997 Dec 12;278(5345):1934-6
pubmed: 9395393
Nat Mater. 2008 May;7(5):391-8
pubmed: 18391957
Beilstein J Nanotechnol. 2014 Jul 22;5:1104-36
pubmed: 25161845
Opt Express. 2013 Sep 9;21(18):21456-65
pubmed: 24104020
Chem Commun (Camb). 2014 Aug 21;50(65):9176-8
pubmed: 24993109
Appl Opt. 1996 Jan 1;35(1):90-6
pubmed: 21068982
Annu Rev Phys Chem. 2003;54:465-92
pubmed: 12626733
ACS Nano. 2012 Aug 28;6(8):7263-9
pubmed: 22768917
Sensors (Basel). 2010;10(5):4855-86
pubmed: 22399911

Auteurs

Boaz Kalderon (B)

Institute of Chemistry, The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem Edmond J. Safra Campus, Givat Ram Jerusalem 91904 Israel roie.yerushalmi@mail.huji.ac.il.

Debabrata Sarkar (D)

Applied NanoPhysics Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology Kattankulathur 603203 India.

Krushnamurty Killi (K)

Institute of Chemistry, The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem Edmond J. Safra Campus, Givat Ram Jerusalem 91904 Israel roie.yerushalmi@mail.huji.ac.il.

Tamuz Danzig (T)

Racah Institute of Physics, The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem J. Safra Campus, Givat Ram Jerusalem 91904 Israel.

Doron Azulay (D)

Racah Institute of Physics, The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem J. Safra Campus, Givat Ram Jerusalem 91904 Israel.

Oded Millo (O)

Racah Institute of Physics, The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem J. Safra Campus, Givat Ram Jerusalem 91904 Israel.

Gili Cohen-Taguri (G)

Bar-Ilan Institute for Nanotechnology and Advanced Materials Ramat-Gan 52900 Israel.

Roie Yerushalmi (R)

Institute of Chemistry, The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem Edmond J. Safra Campus, Givat Ram Jerusalem 91904 Israel roie.yerushalmi@mail.huji.ac.il.

Classifications MeSH