Simultaneous heteroepitaxial growth of SrO (001) and SrO (111) during strontium-assisted deoxidation of the Si (001) surface.


Journal

RSC advances
ISSN: 2046-2069
Titre abrégé: RSC Adv
Pays: England
ID NLM: 101581657

Informations de publication

Date de publication:
21 Aug 2020
Historique:
received: 04 05 2020
accepted: 13 08 2020
entrez: 6 5 2022
pubmed: 24 8 2020
medline: 24 8 2020
Statut: epublish

Résumé

Epitaxial integration of transition-metal oxides with silicon brings a variety of functional properties to the well-established platform of electronic components. In this process, deoxidation and passivation of the silicon surface are one of the most important steps, which in our study were controlled by an ultra-thin layer of SrO and monitored by using transmission electron microscopy (TEM), electron energy-loss spectroscopy (EELS), synchrotron X-ray diffraction (XRD) and reflection high energy electron diffraction (RHEED) methods. Results revealed that an insufficient amount of SrO leads to uneven deoxidation of the silicon surface

Identifiants

pubmed: 35520684
doi: 10.1039/d0ra06548j
pii: d0ra06548j
pmc: PMC9056433
doi:

Types de publication

Journal Article

Langues

eng

Pagination

31261-31270

Informations de copyright

This journal is © The Royal Society of Chemistry.

Déclaration de conflit d'intérêts

There are no conflicts to declare.

Références

Nat Mater. 2016 Apr;15(4):383-96
pubmed: 27005918
Nat Commun. 2016 Feb 08;7:10547
pubmed: 26853112
Nat Mater. 2012 Jan 24;11(2):91
pubmed: 22270814
ACS Appl Mater Interfaces. 2014 Oct 22;6(20):18205-14
pubmed: 25249034
ACS Appl Mater Interfaces. 2017 Mar 8;9(9):8092-8099
pubmed: 28186722
ACS Nano. 2018 Feb 27;12(2):1306-1312
pubmed: 29320634
ACS Appl Mater Interfaces. 2017 Jun 21;9(24):20974-20980
pubmed: 28540719
Micron. 2018 Dec;115:25-31
pubmed: 30149294
Nanotechnology. 2012 Aug 3;23(30):305202
pubmed: 22750846
Chemphyschem. 2001 Sep 17;2(8-9):490-9
pubmed: 23686986
Phys Rev B Condens Matter. 1990 Jul 15;42(2):1254-1257
pubmed: 9995534
J Chem Phys. 2008 Oct 28;129(16):164707
pubmed: 19045298
Adv Mater. 2016 Dec;28(48):10701-10709
pubmed: 27748527

Auteurs

Zoran Jovanović (Z)

Advanced Materials Department, Jožef Stefan Institute Jamova 39 1000 Ljubljana Slovenia zoran.jovanovic@ijs.si.
Laboratory of Physics, Vinča Institute of Nuclear Sciences, National Institute of the Republic of Serbia, University of Belgrade Belgrade Serbia zjovanovic@vinca.rs.

Nicolas Gauquelin (N)

Electron Microscopy for Materials Science (EMAT), University of Antwerp Groenenborgerlaan 171 2020 Antwerp Belgium.

Gertjan Koster (G)

Advanced Materials Department, Jožef Stefan Institute Jamova 39 1000 Ljubljana Slovenia zoran.jovanovic@ijs.si.
Faculty of Science and Technology, MESA+ Institute for Nanotechnology, University of Twente P. O. Box 217 7500 AE Enschede The Netherlands.

Juan Rubio-Zuazo (J)

SpLine, Spanish CRG BM25 Beamline at the ESRF (The European Synchrotron) F-38000 Grenoble France.
Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas (ICMM-CSIC) 28049 Madrid Spain.

Philippe Ghosez (P)

Theoretical Materials Physics, Q-Mat, CESAM, Université de Liège B-4000 Liège Belgium.

Johan Verbeeck (J)

Electron Microscopy for Materials Science (EMAT), University of Antwerp Groenenborgerlaan 171 2020 Antwerp Belgium.

Danilo Suvorov (D)

Advanced Materials Department, Jožef Stefan Institute Jamova 39 1000 Ljubljana Slovenia zoran.jovanovic@ijs.si.

Matjaž Spreitzer (M)

Advanced Materials Department, Jožef Stefan Institute Jamova 39 1000 Ljubljana Slovenia zoran.jovanovic@ijs.si.

Classifications MeSH