Simultaneous heteroepitaxial growth of SrO (001) and SrO (111) during strontium-assisted deoxidation of the Si (001) surface.
Journal
RSC advances
ISSN: 2046-2069
Titre abrégé: RSC Adv
Pays: England
ID NLM: 101581657
Informations de publication
Date de publication:
21 Aug 2020
21 Aug 2020
Historique:
received:
04
05
2020
accepted:
13
08
2020
entrez:
6
5
2022
pubmed:
24
8
2020
medline:
24
8
2020
Statut:
epublish
Résumé
Epitaxial integration of transition-metal oxides with silicon brings a variety of functional properties to the well-established platform of electronic components. In this process, deoxidation and passivation of the silicon surface are one of the most important steps, which in our study were controlled by an ultra-thin layer of SrO and monitored by using transmission electron microscopy (TEM), electron energy-loss spectroscopy (EELS), synchrotron X-ray diffraction (XRD) and reflection high energy electron diffraction (RHEED) methods. Results revealed that an insufficient amount of SrO leads to uneven deoxidation of the silicon surface
Identifiants
pubmed: 35520684
doi: 10.1039/d0ra06548j
pii: d0ra06548j
pmc: PMC9056433
doi:
Types de publication
Journal Article
Langues
eng
Pagination
31261-31270Informations de copyright
This journal is © The Royal Society of Chemistry.
Déclaration de conflit d'intérêts
There are no conflicts to declare.
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