Mechanism and Impact of Bipolar Current Voltage Asymmetry in Computational Phase-Change Memory.
contacts
memristive devices
non-idealities
phase-change materials
Journal
Advanced materials (Deerfield Beach, Fla.)
ISSN: 1521-4095
Titre abrégé: Adv Mater
Pays: Germany
ID NLM: 9885358
Informations de publication
Date de publication:
Sep 2023
Sep 2023
Historique:
revised:
20
03
2022
received:
07
02
2022
medline:
17
5
2022
pubmed:
17
5
2022
entrez:
16
5
2022
Statut:
ppublish
Résumé
Nanoscale resistive memory devices are being explored for neuromorphic and in-memory computing. However, non-ideal device characteristics of read noise and resistance drift pose significant challenges to the achievable computational precision. Here, it is shown that there is an additional non-ideality that can impact computational precision, namely the bias-polarity-dependent current flow. Using phase-change memory (PCM) as a model system, it is shown that this "current-voltage" non-ideality arises both from the material and geometrical properties of the devices. Further, we discuss the detrimental effects of such bipolar asymmetry on in-memory matrix-vector multiply (MVM) operations and provide a scheme to compensate for it.
Identifiants
pubmed: 35570382
doi: 10.1002/adma.202201238
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
e2201238Informations de copyright
© 2022 Wiley-VCH GmbH.
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