Compute-in-Memory for Numerical Computations.

compute-in-memory (CIM) crossbar numerical computations partial differential equations (PDEs) resistive random-access memory (ReRAM)

Journal

Micromachines
ISSN: 2072-666X
Titre abrégé: Micromachines (Basel)
Pays: Switzerland
ID NLM: 101640903

Informations de publication

Date de publication:
02 May 2022
Historique:
received: 25 02 2022
revised: 06 04 2022
accepted: 18 04 2022
entrez: 28 5 2022
pubmed: 29 5 2022
medline: 29 5 2022
Statut: epublish

Résumé

In recent years, compute-in-memory (CIM) has been extensively studied to improve the energy efficiency of computing by reducing data movement. At present, CIM is frequently used in data-intensive computing. Data-intensive computing applications, such as all kinds of neural networks (NNs) in machine learning (ML), are regarded as 'soft' computing tasks. The 'soft' computing tasks are computations that can tolerate low computing precision with little accuracy degradation. However, 'hard' tasks aimed at numerical computations require high-precision computing and are also accompanied by energy efficiency problems. Numerical computations exist in lots of applications, including partial differential equations (PDEs) and large-scale matrix multiplication. Therefore, it is necessary to study CIM for numerical computations. This article reviews the recent developments of CIM for numerical computations. The different kinds of numerical methods solving partial differential equations and the transformation of matrixes are deduced in detail. This paper also discusses the iterative computation of a large-scale matrix, which tremendously affects the efficiency of numerical computations. The working procedure of the ReRAM-based partial differential equation solver is emphatically introduced. Moreover, other PDEs solvers, and other research about CIM for numerical computations, are also summarized. Finally, prospects and the future of CIM for numerical computations with high accuracy are discussed.

Identifiants

pubmed: 35630198
pii: mi13050731
doi: 10.3390/mi13050731
pmc: PMC9144086
pii:
doi:

Types de publication

Journal Article Review

Langues

eng

Références

Nat Commun. 2020 May 18;11(1):2473
pubmed: 32424184

Auteurs

Dongyan Zhao (D)

State Grid Key Laboratory of Power Industrial Chip Design and Analysis Technology, Beijing Smart-Chip Microelectronics Technology Co., Ltd., Beijing 100192, China.

Yubo Wang (Y)

State Grid Key Laboratory of Power Industrial Chip Design and Analysis Technology, Beijing Smart-Chip Microelectronics Technology Co., Ltd., Beijing 100192, China.

Jin Shao (J)

State Grid Key Laboratory of Power Industrial Chip Design and Analysis Technology, Beijing Smart-Chip Microelectronics Technology Co., Ltd., Beijing 100192, China.

Yanning Chen (Y)

State Grid Key Laboratory of Power Industrial Chip Design and Analysis Technology, Beijing Smart-Chip Microelectronics Technology Co., Ltd., Beijing 100192, China.
Beijing Chip Identification Technology Co., Ltd., Beijing 100192, China.

Zhiwang Guo (Z)

State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 201203, China.

Cheng Pan (C)

State Grid Key Laboratory of Power Industrial Chip Design and Analysis Technology, Beijing Smart-Chip Microelectronics Technology Co., Ltd., Beijing 100192, China.

Guangzhi Dong (G)

Beijing Chip Identification Technology Co., Ltd., Beijing 100192, China.

Min Zhou (M)

State Grid Key Laboratory of Power Industrial Chip Design and Analysis Technology, Beijing Smart-Chip Microelectronics Technology Co., Ltd., Beijing 100192, China.

Fengxia Wu (F)

Beijing Chip Identification Technology Co., Ltd., Beijing 100192, China.

Wenhe Wang (W)

State Grid Key Laboratory of Power Industrial Chip Design and Analysis Technology, Beijing Smart-Chip Microelectronics Technology Co., Ltd., Beijing 100192, China.

Keji Zhou (K)

State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 201203, China.

Xiaoyong Xue (X)

State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 201203, China.

Classifications MeSH