High Luminous Efficacy Phosphor-Converted Mass-Produced White LEDs Achieved by AlN Prebuffer and Transitional-Refraction-Index Patterned Sapphire Substrate.

AlN prebuffer light output power light-emitting diodes luminous efficacy transitional-refraction-index patterned sapphire substrate

Journal

Nanomaterials (Basel, Switzerland)
ISSN: 2079-4991
Titre abrégé: Nanomaterials (Basel)
Pays: Switzerland
ID NLM: 101610216

Informations de publication

Date de publication:
11 May 2022
Historique:
received: 11 04 2022
revised: 09 05 2022
accepted: 09 05 2022
entrez: 28 5 2022
pubmed: 29 5 2022
medline: 29 5 2022
Statut: epublish

Résumé

Constant advance in improving the luminous efficacy (

Identifiants

DOI: 10.3390/nano12101638 PMID: 35630859 PMC: PMC9147444
pubmed: 35630859
pii: nano12101638
doi: 10.3390/nano12101638
pmc: PMC9147444
pii:
doi:

Types de publication

Journal Article

Langues

eng

Subventions

Organisme : National Key R&D Program of China
ID : 2017YFB0403100 and 2017YFB0403103
Organisme : National Natural Science Foundation of China
ID : 62174157 and 61974140

Références

ACS Appl Mater Interfaces. 2017 Dec 13;9(49):43386-43392
pubmed: 29164860
Opt Express. 2019 Dec 9;27(25):36388-36404
pubmed: 31873419
Adv Mater. 2018 Jul;30(30):e1801608
pubmed: 29883036
Opt Express. 2019 Jun 10;27(12):A669-A692
pubmed: 31252846
Small. 2021 May;17(19):e2100098
pubmed: 33788402
Opt Express. 2015 Jul 13;23(14):18156-65
pubmed: 26191874
Nano Lett. 2016 May 11;16(5):3301-8
pubmed: 27045458
Opt Express. 2012 Mar 12;20(6):6808-15
pubmed: 22418563
Nat Commun. 2014 Jul 08;5:4312
pubmed: 25002064
Aust J Prim Health. 2019 Mar;25(1):6-12
pubmed: 30759360
RSC Adv. 2020 Apr 24;10(28):16284-16290
pubmed: 35498868
Nat Mater. 2014 Sep;13(9):891-6
pubmed: 24952748
Sci Rep. 2016 Jan 18;6:19537
pubmed: 26777294

Auteurs

Shuo Zhang (S)

Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China.
ORCID: 0000-0002-7262-8847

Meng Liang (M)

Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China.

Yan Yan (Y)

Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China.

Jinpeng Huang (J)

Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.

Yan Li (Y)

Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China.

Tao Feng (T)

Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China.

Xueliang Zhu (X)

Xiamen San'an Optoelectronic Technology Co., Ltd., Xiamen 361009, China.

Zhicong Li (Z)

Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Yangzhou Zhongke Semiconductor Lighting Company, Yangzhou 225101, China.

Chenke Xu (C)

Xiamen San'an Optoelectronic Technology Co., Ltd., Xiamen 361009, China.

Junxi Wang (J)

Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China.

Jinmin Li (J)

Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China.

Zhiqiang Liu (Z)

Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China.

Xiaoyan Yi (X)

Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China.
ORCID: 0000-0002-7031-4123

Classifications MeSH