Solution-processed Ge(ii)-based chalcogenide thin films with tunable bandgaps for photovoltaics.


Journal

Chemical science
ISSN: 2041-6520
Titre abrégé: Chem Sci
Pays: England
ID NLM: 101545951

Informations de publication

Date de publication:
25 May 2022
Historique:
received: 18 12 2021
accepted: 22 04 2022
entrez: 10 6 2022
pubmed: 11 6 2022
medline: 11 6 2022
Statut: epublish

Résumé

Solution processes have been widely used to construct chalcogenide-based thin-film optoelectronic and electronic devices that combine high performance with low-cost manufacturing. However, Ge(ii)-based chalcogenide thin films possessing great potential for optoelectronic devices have not been reported using solution-based processes; this is mainly attributed to the easy oxidation of intermediate Ge(ii) to Ge(iv) in the precursor solution. Here we report solution-processed deposition of Ge(ii)-based chalcogenide thin films in the case of GeSe and GeS films by introducing hypophosphorous acid as a suitable reducing agent and strong acid. This enables the generation of Ge(ii) from low-cost and stable GeO

Identifiants

pubmed: 35685789
doi: 10.1039/d1sc07043f
pii: d1sc07043f
pmc: PMC9132017
doi:

Types de publication

Journal Article

Langues

eng

Pagination

5944-5950

Informations de copyright

This journal is © The Royal Society of Chemistry.

Déclaration de conflit d'intérêts

The authors declare no competing financial interest.

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Auteurs

Liyan Hu (L)

Beijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences Beijing 100190 China djxue@iccas.ac.cn.
Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University Taiyuan 030006 China.

Mingjie Feng (M)

Beijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences Beijing 100190 China djxue@iccas.ac.cn.
National Engineering Research Center for Advanced Polymer Processing Technology, Zhengzhou University Zhengzhou 450002 China.

Xia Wang (X)

School of Materials Science and Engineering, Hubei Univeristy Wuhan 430062 China.

Shunchang Liu (S)

Beijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences Beijing 100190 China djxue@iccas.ac.cn.
University of Chinese Academy of Sciences Beijing 100049 China.

Jinpeng Wu (J)

Beijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences Beijing 100190 China djxue@iccas.ac.cn.
University of Chinese Academy of Sciences Beijing 100049 China.

Bin Yan (B)

Beijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences Beijing 100190 China djxue@iccas.ac.cn.
University of Chinese Academy of Sciences Beijing 100049 China.

Wenbo Lu (W)

Beijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences Beijing 100190 China djxue@iccas.ac.cn.
University of Chinese Academy of Sciences Beijing 100049 China.

Fang Wang (F)

Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University Taiyuan 030006 China.

Jin-Song Hu (JS)

Beijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences Beijing 100190 China djxue@iccas.ac.cn.
University of Chinese Academy of Sciences Beijing 100049 China.

Ding-Jiang Xue (DJ)

Beijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences Beijing 100190 China djxue@iccas.ac.cn.
University of Chinese Academy of Sciences Beijing 100049 China.

Classifications MeSH