Solution-processed Ge(ii)-based chalcogenide thin films with tunable bandgaps for photovoltaics.
Journal
Chemical science
ISSN: 2041-6520
Titre abrégé: Chem Sci
Pays: England
ID NLM: 101545951
Informations de publication
Date de publication:
25 May 2022
25 May 2022
Historique:
received:
18
12
2021
accepted:
22
04
2022
entrez:
10
6
2022
pubmed:
11
6
2022
medline:
11
6
2022
Statut:
epublish
Résumé
Solution processes have been widely used to construct chalcogenide-based thin-film optoelectronic and electronic devices that combine high performance with low-cost manufacturing. However, Ge(ii)-based chalcogenide thin films possessing great potential for optoelectronic devices have not been reported using solution-based processes; this is mainly attributed to the easy oxidation of intermediate Ge(ii) to Ge(iv) in the precursor solution. Here we report solution-processed deposition of Ge(ii)-based chalcogenide thin films in the case of GeSe and GeS films by introducing hypophosphorous acid as a suitable reducing agent and strong acid. This enables the generation of Ge(ii) from low-cost and stable GeO
Identifiants
pubmed: 35685789
doi: 10.1039/d1sc07043f
pii: d1sc07043f
pmc: PMC9132017
doi:
Types de publication
Journal Article
Langues
eng
Pagination
5944-5950Informations de copyright
This journal is © The Royal Society of Chemistry.
Déclaration de conflit d'intérêts
The authors declare no competing financial interest.
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