Sign Change of Spin-Orbit Torque in Pt/NiO/CoFeB Structures.

Journal

Physical review letters
ISSN: 1079-7114
Titre abrégé: Phys Rev Lett
Pays: United States
ID NLM: 0401141

Informations de publication

Date de publication:
27 May 2022
Historique:
received: 17 02 2021
revised: 30 01 2022
accepted: 20 04 2022
entrez: 10 6 2022
pubmed: 11 6 2022
medline: 11 6 2022
Statut: ppublish

Résumé

Antiferromagnetic insulators have recently been proved to support spin current efficiently. Here, we report the dampinglike spin-orbit torque (SOT) in Pt/NiO/CoFeB has a strong temperature dependence and reverses the sign below certain temperatures, which is different from the slight variation with temperature in the Pt/CoFeB bilayer. The negative dampinglike SOT at low temperatures is proposed to be mediated by the magnetic interactions that tie with the "exchange bias" in Pt/NiO/CoFeB, in contrast to the thermal-magnon-mediated scenario at high temperatures. Our results highlight the promise to control the SOT through tuning the magnetic structure in multilayers.

Identifiants

DOI: 10.1103/PhysRevLett.128.217702 PMID: 35687442
pubmed: 35687442
doi: 10.1103/PhysRevLett.128.217702
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

217702

Auteurs

Dapeng Zhu (D)

Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.
Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, China.

Tianrui Zhang (T)

Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.

Xiao Fu (X)

Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.
Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, China.

Runrun Hao (R)

Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.
Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, China.

Amir Hamzić (A)

Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.
Department of Physics, Faculty of Science, University of Zagreb, Zagreb HR-10001, Croatia.

Huaiwen Yang (H)

Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.
Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, China.

Xueying Zhang (X)

Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.
Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, China.

Hui Zhang (H)

Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.

Ao Du (A)

Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.

Danrong Xiong (D)

Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.

Kewen Shi (K)

Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.

Shishen Yan (S)

School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.

Shufeng Zhang (S)

Department of Physics, University of Arizona, Tucson, Arizona 85721, USA.

Albert Fert (A)

Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.
Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau 91767, France.

Weisheng Zhao (W)

Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.
Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, China.

Classifications MeSH