Enhanced Photoconductivity at Dislocations in SrTiO
conductive atomic force microscope
dislocations
microelectrodes
oxide ceramic single crystals
photoconductivity
photovoltaic effect
Journal
Advanced materials (Deerfield Beach, Fla.)
ISSN: 1521-4095
Titre abrégé: Adv Mater
Pays: Germany
ID NLM: 9885358
Informations de publication
Date de publication:
Aug 2022
Aug 2022
Historique:
revised:
31
05
2022
received:
03
04
2022
pubmed:
22
6
2022
medline:
22
6
2022
entrez:
21
6
2022
Statut:
ppublish
Résumé
Dislocations are 1D crystallographic line defects and are usually seen as detrimental to the functional properties of classic semiconductors. It is shown here that this not necessarily accounts for oxide semiconductors in which dislocations are capable of boosting the photoconductivity. Strontium titanate single crystals are controllably deformed to generate a high density of ordered dislocations of two slip systems possessing different mesoscopic arrangements. For both slip systems, nanoscale conductive atomic force microscope investigations reveal a strong enhancement of the photoconductivity around the dislocation cores. Macroscopic in-plane measurements indicate that the two dislocation systems result in different global photoconductivity behavior despite the similar local enhancement. Depending on the arrangement, the global photoresponse can be increased by orders of magnitude. Additionally, indications for a bulk photovoltaic effect enabled by dislocation-surrounding strain fields are observed for the first time. This proves that dislocations in oxide semiconductors can be of large interest for tailoring photoelectric functionalities. Direct evidence that electronic transport is confined to the dislocation core points to a new emerging research field.
Identifiants
pubmed: 35727056
doi: 10.1002/adma.202203032
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
e2203032Subventions
Organisme : Engineering and Physical Science Research Council (EPSRC)
ID : EP/T027207/1
Organisme : Engineering and Physical Science Research Council (EPSRC)
ID : EP/P025803/1
Organisme : Alexander von Humboldt Research Award
Organisme : German Research Foundation (DFG)
ID : 414179371
Informations de copyright
© 2022 The Authors. Advanced Materials published by Wiley-VCH GmbH.
Références
K. Szot, C. Rodenbücher, G. Bihlmayer, W. Speier, R. Ishikawa, N. Shibata, Y. Ikuhara, Crystals 2018, 8, 241.
Y. Furushima, A. Nakamura, E. Tochigi, Y. Ikuhara, K. Toyoura, K. Matsunaga, J. Appl. Phys. 2016, 120, 142107.
H.-S. Lee, T. Mizoguchi, J. Mistui, T. Yamamoto, S.-J. L. Kang, Y. Ikuhara, Phys. Rev. B 2011, 83, 104110.
J. Amodeo, S. Merkel, C. Tromas, P. Carrez, S. Korte-Kerzel, P. Cordier, J. Chevalier, Crystals 2018, 8, 240.
P. Gumbsch, S. Taeri-Baghbadrani, D. Brunner, W. Sigle, M. Rühle, Phys. Rev. Lett. 2001, 87, 085505.
Y. Oshima, A. Nakamura, K. Matsunaga, Science 2018, 360, 772.
Y. Oshima, A. Nakamura, K. P. D. Lagerlöf, T. Yokoi, K. Matsunaga, Acta Mater. 2020, 195, 690.
R. W. Whitworth, Adv. Phys. 1975, 24, 203.
K. K. Adepalli, J. Yang, J. Maier, H. L. Tuller, B. Yildiz, Adv. Funct. Mater. 2017, 27, 1700243.
Q. K. Muhammad, L. Porz, A. Nakamura, K. Matsunaga, M. Rohnke, J. Janek, J. Rödel, T. Frömling, Nano Energy 2021, 85, 105944.
B. Yildiz, MRS Bull. 2014, 39, 147.
J. M. Börgers, J. Kler, K. Ran, E. Larenz, T. E. Weirich, R. Dittmann, R. A. De Souza, Adv. Funct. Mater. 2021, 31, 2105647
K. Szot, W. Speier, G. Bihlmayer, R. Waser, Nat. Mater. 2006, 5, 312.
P. Ren, M. Song, J. Lee, J. Zheng, Z. Lu, M. Engelhard, X. Yang, X. Li, D. Kisailus, D. Li, Adv. Mater. Interfaces 2019, 6, 1901121.
M. Höfling, X. Zhou, L. M. Riemer, E. Bruder, B. Liu, L. Zhou, P. B. Groszewicz, F. Zhuo, B. Xu, K. Durst, X. Tan, Science (1979) 2021, 372, 961.
S. Hameed, D. Pelc, Z. W. Anderson, A. Klein, R. J. Spieker, L. Yue, B. Das, J. Ramberger, M. Lukas, Y. Liu, M. J. Krogstad, R. Osborn, Y. Li, C. Leighton, R. M. Fernandes, M. Greven, Nat. Mater. 2021, 21, 54.
D. Marrocchelli, L. Sun, B. Yildiz, J. Am. Chem. Soc. 2015, 137, 4735.
P. Gao, R. Ishikawa, B. Feng, A. Kumamoto, N. Shibata, Y. Ikuhara, Ultramicroscopy 2018, 184, 217.
L. Porz, T. Frömling, A. Nakamura, N. Li, R. Maruyama, K. Matsunaga, P. Gao, H. Simons, C. Dietz, M. Rohnke, J. Janek, J. Rödel, ACS Nano 2020, 15, 9355.
P. Gao, S. Yang, R. Ishikawa, N. Li, B. Feng, A. Kumamoto, N. Shibata, P. Yu, Y. Ikuhara, Phys. Rev. Lett. 2018, 120, 267601.
M. M. Yang, D. J. Kim, M. Alexe, Science (1979) 2018, 360, 904.
Y. A. Osipyan, V. F. Petrenko, A. V. Zaretskii, R. W. Whitworth, Adv. Phys. 1986, 35, 115.
A. V. Zaretskii, V. F. Petrenko, Fiz. Tverd. Tela 1978, 20, 1167.
A. V. Zaretskii, V. F. Petrenko, Fiz. Tverd. Tela 1983, 25, 532.
L. G. Kirichenko, V. F. Petrenko, Sov. Phys., Solid State 1980, 22, 929.
L. Kirichenko, V. F. Petrenko, G. V. Uimin, J. Exp. Theor. Phys. 1978, 47, 389.
R. Labusch, J. Hess, Phys. Status Solidi A 1994, 146, 145.
L. Carlsson, C. Svensson, J. Appl. Phys. 1970, 41, 1652.
I. Yonenaga, Y. Ohno, T. Yao, K. Edagawa, J. Cryst. Growth 2014, 403, 72.
L. Porz, Mechanics and Electrical Conductivity of Dislocation-Tuned Ceramics, Technische Universität Darmstadt, Darmstadt, Germany 2021.
E. A. Patterson, M. Major, W. Donner, K. Durst, K. G. Webber, J. Rödel, J. Am. Ceram. Soc. 2016, 99, 3411.
S. M. Sze, Physics of Semiconductor Devices, John Wiley and Sons, New York 1981.
W. Sigle, C. Sarbu, D. Brunner, M. Rühle, Philos. Mag. 2006, 86, 4809.
K. K. Adepalli, M. Kelsch, R. Merkle, J. Maier, Adv. Funct. Mater. 2013, 23, 1798.
D. Wrana, T. Gensch, B. R. Jany, K. Cieślik, C. Rodenbücher, G. Cempura, A. Kruk, F. Krok, Appl. Surf. Sci. 2021, 569, 150909.
Y. Kanemitsu, Y. Yamada, Phys. Status Solidi B 2011, 248, 416.
E. Mikheev, B. Himmetoglu, A. P. Kajdos, P. Moetakef, T. A. Cain, C. G. van de Walle, S. Stemmer, Appl. Phys. Lett. 2015, 106, 062102.
K. van Benthem, C. Elsässer, R. H. French, J. Appl. Phys. 2001, 90, 6156.
H. M. Ng, D. Doppalapudi, T. D. Moustakas, N. G. Weimann, L. F. Eastman, Appl. Phys. Lett. 1998, 73, 821.
D. G. Zhao, H. Yang, J. J. Zhu, D. S. Jiang, Z. S. Liu, S. M. Zhang, Y. T. Wang, J. W. Liang, Appl. Phys. Lett. 2006, 89, 3.
R. W. Whitworth, Philos. Mag. A 1985, 51, 857.
B. Jalan, S. J. Allen, G. E. Beltz, P. Moetakef, S. Stemmer, Appl. Phys. Lett. 2011, 98, 132102.
B. I. Sturman, V. M. Fridkin, The Photovoltaic and Photorefractive Effects in Noncentrosymmetric Materials, Routledge, London 1992.
V. M. Fridkin, Crystallogr. Rep. 2001, 46, 654.
W. Cai, A. Arsenlis, C. R. Weinberger, V. v. Bulatov, J. Mech. Phys. Solids 2006, 54, 561.
P. Zubko, G. Catalan, A. K. Tagantsev, Annu. Rev. Mater. Res. 2013, 43, 387.
V. M. Fridkin, E. P. Efremova, B. H. Karimov, V. A. Kuznezov, I. P. Kuzmina, A. N. Lobachev, V. G. Lazarev, A. J. Rodin, Appl. Phys. 1981, 25, 77.
L. Porz, A. J. Klomp, X. Fang, N. Li, C. Yildirim, C. Detlefs, E. Bruder, M. Höfling, W. Rheinheimer, E. A. Patterson, P. Gao, K. Durst, A. Nakamura, K. Albe, H. Simons, J. Rödel, L. Porz, Mater. Horiz. 2021, 8, 1528.