Transient Dynamics of Charges and Excitons in Quantum Dot Light-Emitting Diodes.

charge injection light-emitting diodes mobility quantum dots transient electroluminescence

Journal

Small (Weinheim an der Bergstrasse, Germany)
ISSN: 1613-6829
Titre abrégé: Small
Pays: Germany
ID NLM: 101235338

Informations de publication

Date de publication:
Jul 2022
Historique:
revised: 28 05 2022
received: 12 04 2022
pubmed: 28 6 2022
medline: 28 6 2022
entrez: 27 6 2022
Statut: ppublish

Résumé

Wide interest in quantum dot (QD) light-emitting diodes (QLEDs) for potential application to display devices and light sources has led to their rapid advancement in device performance. Despite such progress, detailed operation mechanisms of QLEDs, which are necessary for the fundamental understanding and further improvements, have been still uncertain because of the intricate interaction between charges and excitons in electrical operation. In this work, the transient electroluminescence (TREL) signals of dichromatic QLEDs which are purposely designed to consist of two different color-emitting QD layers are analyzed. As a result, not only can the charge injection and exciton recombination processes be visualized but the electron mobility of the QD layer can also be estimated. Furthermore, the effects of Förster resonant energy transfer between two QDs and exciton quenching near the QD layer are quantitatively measured in QLED operation. The authors believe that their results based on TREL analyses will contribute to the understanding and development of high-performance QLEDs.

Identifiants

pubmed: 35754301
doi: 10.1002/smll.202202290
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

e2202290

Subventions

Organisme : Industrial Strategic Technology Development Program
ID : 10077471
Organisme : Technology Innovation Program
ID : 20010737
Organisme : Technology Innovation Program
ID : 20016332
Organisme : Ministry of Trade, Industry & Energy
Organisme : Basic Science Research Program
ID : NRF-2020R1F1A1074263
Organisme : Basic Science Research Program
ID : 2018R1A6A1A03025242
Organisme : National Research Foundation of Korea
Organisme : Ministry of Education
Organisme : Kwangwoon University

Informations de copyright

© 2022 Wiley-VCH GmbH.

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Auteurs

Jaeyoul Kim (J)

Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul, 08826, Republic of Korea.

Donghyo Hahm (D)

SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon, 16419, Republic of Korea.

Wan Ki Bae (WK)

SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon, 16419, Republic of Korea.

Hyunho Lee (H)

Department of Electronic Engineering, Kwangwoon University, Seoul, 01897, Republic of Korea.

Jeonghun Kwak (J)

Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul, 08826, Republic of Korea.
Soft Foundry Institute, Seoul National University, 1-Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea.

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