Voltage-Controlled Skyrmionic Interconnect with Multiple Magnetic Information Carriers.

VCMA interconnect device magnetic anisotropy magnetic skyrmions micromagnetic simulations skyrmionic spin textures spintronic devices

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
06 Jul 2022
Historique:
pubmed: 28 6 2022
medline: 28 6 2022
entrez: 27 6 2022
Statut: ppublish

Résumé

Magnetic skyrmions have been in the spotlight since they were observed in technologically relevant systems at room temperature. More recently, there has been increasing interest in additional quasiparticles that may exist as stable/metastable spin textures in magnets, such as the skyrmionium and the antiskyrmionite (i.e., a skyrmion bag with two skyrmions inside) that have distinct topological characteristics. The next challenge and opportunity, at the same time, is to investigate the use of multiple magnetic quasiparticles as information carriers in a single device for next-generation nanocomputing. In this paper, we propose a spintronic interconnect device where multiple sequences of information signals are encoded and transmitted simultaneously by skyrmions, skyrmioniums, and antiskyrmionites. The proposed spintronic interconnect device can be pipelined via voltage-controlled magnetic anisotropy (VCMA) gated synchronizers that behave as intermediate registers. We demonstrate theoretically that the interconnect throughput and transmission energy can be effectively tuned by the VCMA gate voltage and appropriate electric current pulses. By carefully adjusting the device structure characteristics, our spintronic interconnect device exhibits comparable energy efficiency with copper interconnects in mainstream CMOS technologies. This study provides fresh insight into the possibilities of skyrmionic devices in future spintronic applications.

Identifiants

pubmed: 35758014
doi: 10.1021/acsami.2c07470
pmc: PMC9301624
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

30420-30434

Commentaires et corrections

Type : ErratumIn

Références

Phys Rev Lett. 2020 Sep 4;125(10):107201
pubmed: 32955305
Nat Nanotechnol. 2013 Mar;8(3):152-6
pubmed: 23459548
Sci Rep. 2019 Mar 11;9(1):4144
pubmed: 30858450
Nat Mater. 2011 Nov 13;11(1):39-43
pubmed: 22081081
Sci Rep. 2016 Mar 15;6:23164
pubmed: 26975697
Nat Commun. 2020 Feb 19;11(1):949
pubmed: 32075968
Nat Nanotechnol. 2013 Oct;8(10):742-7
pubmed: 24013132
Sci Rep. 2018 Mar 13;8(1):4464
pubmed: 29535320
Sci Rep. 2014 Oct 29;4:6784
pubmed: 25351135
Nanoscale. 2020 May 7;12(17):9507-9516
pubmed: 32314775
Phys Rev Lett. 2014 Mar 14;112(10):106602
pubmed: 24679318
Science. 2007 Jan 19;315(5810):349-51
pubmed: 17234941
J Phys Condens Matter. 2020 Apr 3;32(14):143001
pubmed: 31689688
Nat Nanotechnol. 2021 Oct;16(10):1086-1091
pubmed: 34341518
Sci Rep. 2015 Mar 24;5:9400
pubmed: 25802991
Nat Commun. 2020 Jan 22;11(1):428
pubmed: 31969569
Sci Rep. 2015 Jun 18;5:11369
pubmed: 26087287
Nat Nanotechnol. 2017 Nov;12(11):1040-1044
pubmed: 28967891
Nat Nanotechnol. 2009 Mar;4(3):158-61
pubmed: 19265844
Nat Nanotechnol. 2016 May;11(5):449-54
pubmed: 26809057
Sci Rep. 2019 Aug 20;9(1):12119
pubmed: 31431688
Sci Rep. 2017 Jun 22;7(1):4060
pubmed: 28642570
Nat Mater. 2011 Nov 13;11(1):64-8
pubmed: 22081084
Nat Commun. 2016 Jan 19;7:10293
pubmed: 26782905
Nat Nanotechnol. 2016 May;11(5):444-8
pubmed: 26780660
Sci Rep. 2015 Jan 06;5:7643
pubmed: 25560935
ACS Appl Mater Interfaces. 2018 May 16;10(19):16887-16892
pubmed: 29682962
Nat Commun. 2022 Mar 24;13(1):1593
pubmed: 35332156
Phys Rev Lett. 2021 Apr 23;126(16):167701
pubmed: 33961483
Sci Rep. 2018 Nov 16;8(1):16966
pubmed: 30446670
Phys Rev Lett. 2016 Mar 25;116(12):126601
pubmed: 27058088
Nat Nanotechnol. 2013 Nov;8(11):839-44
pubmed: 24162000
Sci Rep. 2015 May 29;5:10620
pubmed: 26024469
Micromachines (Basel). 2019 May 15;10(5):
pubmed: 31096668
Nat Nanotechnol. 2018 Dec;13(12):1154-1160
pubmed: 30224795

Auteurs

Runze Chen (R)

Department of Computer Science, School of Engineering, The University of Manchester, Manchester M13 9PL, United Kingdom.

Yu Li (Y)

Department of Computer Science, School of Engineering, The University of Manchester, Manchester M13 9PL, United Kingdom.
Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China.

Classifications MeSH