A new direct band gap Si-Ge allotrope with advanced electronic and optical properties.
Journal
Physical chemistry chemical physics : PCCP
ISSN: 1463-9084
Titre abrégé: Phys Chem Chem Phys
Pays: England
ID NLM: 100888160
Informations de publication
Date de publication:
06 Jul 2022
06 Jul 2022
Historique:
pubmed:
28
6
2022
medline:
28
6
2022
entrez:
27
6
2022
Statut:
epublish
Résumé
Direct-band silicon materials have been a sought-after material for potential applications in silicon photonics and solar cells. Accordingly, methodologies like nanostructure engineering, alloy engineering and strain engineering have been developed. In this work, the particle swarm optimization (PSO) algorithm is used to design direct-band Si-Ge alloys. The findings of phonon computations demonstrate that all these structures are dynamically stable. In addition,
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM