Review of electrical stimulus methods of

Resistive random access memory (RRAM) devices have been demonstrated to be a promising solution for the implementation of a neuromorphic system with high-density synapses due to the simple device structure, nanoscale dimension, high switching speed, and low power consumption. Various electrical stimuli applied to RRAM devices could cause various working modes of the bionic synapses. The application of RRAM devices needs to understand the micromechanism of the resistive switching process, which is inseparable from advanced characterization techniques.