Identification and Manipulation of Defects in Black Phosphorus.


Journal

The journal of physical chemistry letters
ISSN: 1948-7185
Titre abrégé: J Phys Chem Lett
Pays: United States
ID NLM: 101526034

Informations de publication

Date de publication:
14 Jul 2022
Historique:
pubmed: 2 7 2022
medline: 2 7 2022
entrez: 1 7 2022
Statut: ppublish

Résumé

We identify and manipulate commonly occurring defects in black phosphorus, combining scanning tunneling microscopy experiments with density functional theory calculations. A ubiquitous defect, imaged at negative bias as a bright dumbbell extending over several nanometers, is shown to arise from a substitutional Sn impurity in the second sublayer. Another frequently observed defect type is identified as arising from an interstitial Sn atom; this defect can be switched to a more stable configuration consisting of a Sn substitutional defect + P adatom, by application of an electrical pulse via the STM tip. DFT calculations show that this pulse-induced structural transition switches the system from a non-magnetic configuration to a magnetic one. We introduce States Projected Onto Individual Layers (SPOIL) quantities which provide information about atom-wise and orbital-wise contributions to bias-dependent features observed in STM images.

Identifiants

pubmed: 35775724
doi: 10.1021/acs.jpclett.2c01370
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

6276-6282

Auteurs

Rishav Harsh (R)

Université de Paris, CNRS, Laboratoire Matériaux et Phénomènes Quantiques, 75013, Paris, France.

Sourav Mondal (S)

Theoretical Sciences Unit and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064, India.

Devina Sharma (D)

Theoretical Sciences Unit and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064, India.

Mehdi Bouatou (M)

Université de Paris, CNRS, Laboratoire Matériaux et Phénomènes Quantiques, 75013, Paris, France.

Cyril Chacon (C)

Université de Paris, CNRS, Laboratoire Matériaux et Phénomènes Quantiques, 75013, Paris, France.

Maxim Ilyn (M)

Centro de Física de Materiales (CFM-MPC) Centro Mixto CSIC-UPV/EHU, E-20018 Donostia-San Sebastian, Spain.

Celia Rogero (C)

Centro de Física de Materiales (CFM-MPC) Centro Mixto CSIC-UPV/EHU, E-20018 Donostia-San Sebastian, Spain.
Donostia International Physics Center DIPC, Donostia-San Sebastian, Basque Country 20018, Spain.

Vincent Repain (V)

Université de Paris, CNRS, Laboratoire Matériaux et Phénomènes Quantiques, 75013, Paris, France.

Amandine Bellec (A)

Université de Paris, CNRS, Laboratoire Matériaux et Phénomènes Quantiques, 75013, Paris, France.

Yann Girard (Y)

Université de Paris, CNRS, Laboratoire Matériaux et Phénomènes Quantiques, 75013, Paris, France.

Sylvie Rousset (S)

Université de Paris, CNRS, Laboratoire Matériaux et Phénomènes Quantiques, 75013, Paris, France.

Raman Sankar (R)

Institute of Physics, Academia Sinica, Taipei 11529, Taiwan, Republic of China.

Woei Wu Pai (WW)

Center for Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan, Republic of China.

Shobhana Narasimhan (S)

Theoretical Sciences Unit and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064, India.

Jérôme Lagoute (J)

Université de Paris, CNRS, Laboratoire Matériaux et Phénomènes Quantiques, 75013, Paris, France.

Classifications MeSH