Conductance Switching in Liquid Crystal-Inspired Self-Assembled Monolayer Junctions.

liquid crystals molecular electronics resistive switching self-assembled monolayer tunnel junction

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
13 Jul 2022
Historique:
pubmed: 2 7 2022
medline: 2 7 2022
entrez: 1 7 2022
Statut: ppublish

Résumé

We present the prototype of a ferroelectric tunnel junction (FTJ), which is based on a self-assembled monolayer (SAM) of small, functional molecules. These molecules have a structure similar to those of liquid crystals, and they are embedded between two solid-state electrodes. The SAM, which is deposited through a short sequence of simple fabrication steps, is extremely thin (3.4 ± 0.5 nm) and highly uniform. The functionality of the FTJ is ingrained in the chemical structure of the SAM components: a conformationally flexible dipole that can be reversibly reoriented in an electrical field. Thus, the SAM acts as an electrically switchable tunnel barrier. Fabricated stacks of Al/Al

Identifiants

pubmed: 35776551
doi: 10.1021/acsami.2c05264
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

31044-31053

Auteurs

Julian M Dlugosch (JM)

Molecular Electronics, Technical University of Munich, Hans-Piloty-Straße 1, 85748 Garching, Germany.

Henning Seim (H)

Electronics R&D, Merck KGaA, Frankfurter Straße 250, 64293 Darmstadt, Germany.

Achyut Bora (A)

Molecular Electronics, Technical University of Munich, Hans-Piloty-Straße 1, 85748 Garching, Germany.

Takuya Kamiyama (T)

Molecular Electronics, Technical University of Munich, Hans-Piloty-Straße 1, 85748 Garching, Germany.

Itai Lieberman (I)

Electronics R&D, Merck KGaA, Frankfurter Straße 250, 64293 Darmstadt, Germany.

Falk May (F)

Electronics R&D, Merck KGaA, Frankfurter Straße 250, 64293 Darmstadt, Germany.

Florian Müller-Plathe (F)

Eduard-Zintl Institute of Inorganic and Physical Chemistry, Technical University of Darmstadt, Alarich-Weiss-Straße 8, 64287 Darmstadt, Germany.

Alexei Nefedov (A)

Institute of Functional Interfaces, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany.

Saurav Prasad (S)

Eduard-Zintl Institute of Inorganic and Physical Chemistry, Technical University of Darmstadt, Alarich-Weiss-Straße 8, 64287 Darmstadt, Germany.

Sebastian Resch (S)

Electronics R&D, Merck KGaA, Frankfurter Straße 250, 64293 Darmstadt, Germany.

Kai Saller (K)

Molecular Electronics, Technical University of Munich, Hans-Piloty-Straße 1, 85748 Garching, Germany.

Christian Seim (C)

Xploraytion GmbH, Bismarckstraße 10-12, 10625 Berlin, Germany.

Maximilian Speckbacher (M)

Molecular Electronics, Technical University of Munich, Hans-Piloty-Straße 1, 85748 Garching, Germany.

Frank Voges (F)

Electronics R&D, Merck KGaA, Frankfurter Straße 250, 64293 Darmstadt, Germany.

Marc Tornow (M)

Molecular Electronics, Technical University of Munich, Hans-Piloty-Straße 1, 85748 Garching, Germany.
Fraunhofer Research Institution for Microsystems and Solid State Technologies (EMFT), Hansastraße 27d, 80686 München, Germany.

Peer Kirsch (P)

Electronics R&D, Merck KGaA, Frankfurter Straße 250, 64293 Darmstadt, Germany.
Institute of Materials Science, Technical University of Darmstadt, Alarich-Weiss-Straße 2, 64297 Darmstadt, Germany.
Freiburg Materials Research Center (FMF), Albert Ludwig University Freiburg, Stefan-Meier-Straße 21, 79104 Freiburg, Germany.

Classifications MeSH