High-temperature ionic logic gates composed of an ionic rectifying solid-electrolyte interface.


Journal

RSC advances
ISSN: 2046-2069
Titre abrégé: RSC Adv
Pays: England
ID NLM: 101581657

Informations de publication

Date de publication:
22 Jun 2022
Historique:
received: 02 02 2022
accepted: 17 06 2022
entrez: 8 7 2022
pubmed: 9 7 2022
medline: 9 7 2022
Statut: epublish

Résumé

Direct data collection from extremely high temperature environments is vitally important for the progress of industrial technologies such as combustion-engines, turbines and furnaces for various purposes. However, present semiconductor-based information devices are not suitable for such high-temperature applications due to thermal excitation of electronic carriers. Herein, we demonstrate high-temperature ionic AND and OR logic gates composed of the oxide-ion-conducting yttria stabilized zirconia (YSZ) and the mixed oxide-ion and electron conducting La

Identifiants

pubmed: 35799931
doi: 10.1039/d2ra00710j
pii: d2ra00710j
pmc: PMC9219041
doi:

Types de publication

Journal Article

Langues

eng

Pagination

18501-18506

Informations de copyright

This journal is © The Royal Society of Chemistry.

Déclaration de conflit d'intérêts

There are no conflicts to declare.

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Auteurs

Takashi Nakamura (T)

Institute of Multidisciplinary Research for Advanced Materials, Tohoku University 2-1-1, Katahira, Aoba-Ku Sendai 980-8577 Japan takashi.nakamura.e3@tohoku.ac.jp.

Miri Honda (M)

Graduate School of Engineering, Tohoku University 6-6-1 Aramaki-Aoba, Aoba-ku Sendai 980-8579 Japan.

Yuta Kimura (Y)

Institute of Multidisciplinary Research for Advanced Materials, Tohoku University 2-1-1, Katahira, Aoba-Ku Sendai 980-8577 Japan takashi.nakamura.e3@tohoku.ac.jp.

Koji Amezawa (K)

Institute of Multidisciplinary Research for Advanced Materials, Tohoku University 2-1-1, Katahira, Aoba-Ku Sendai 980-8577 Japan takashi.nakamura.e3@tohoku.ac.jp.

Classifications MeSH