Device and Circuit Analysis of Double Gate Field Effect Transistor with Mono-Layer WS
Sub-2 nm technology
TMD
WS2
double gate
Journal
Nanomaterials (Basel, Switzerland)
ISSN: 2079-4991
Titre abrégé: Nanomaterials (Basel)
Pays: Switzerland
ID NLM: 101610216
Informations de publication
Date de publication:
04 Jul 2022
04 Jul 2022
Historique:
received:
18
05
2022
revised:
28
06
2022
accepted:
29
06
2022
entrez:
9
7
2022
pubmed:
10
7
2022
medline:
10
7
2022
Statut:
epublish
Résumé
In this work, WS
Identifiants
pubmed: 35808135
pii: nano12132299
doi: 10.3390/nano12132299
pmc: PMC9268193
pii:
doi:
Types de publication
Journal Article
Langues
eng
Subventions
Organisme : National Research Foundation of Korea
ID : 2020M3F3A2A01081595
Organisme : National Research Foundation of Korea
ID : 2020M3F3A2A01082326
Références
Nat Commun. 2020 Aug 7;11(1):3979
pubmed: 32769968
Sci Rep. 2021 Mar 23;11(1):6610
pubmed: 33758215
Nature. 2021 May;593(7858):211-217
pubmed: 33981050
Nat Commun. 2020 Mar 5;11(1):1205
pubmed: 32139679
Nat Commun. 2021 Jan 29;12(1):693
pubmed: 33514710