Laser Irradiation Effect on the p-GaSe/n-HfS

2D vdW heterojunction DFT GaSe HfS2 laser irradiation devices photodetectors

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
10 Aug 2022
Historique:
pubmed: 23 7 2022
medline: 23 7 2022
entrez: 22 7 2022
Statut: ppublish

Résumé

Two-dimensional (2D)-based PN-heterojunction revealed a promising future of atomically thin optoelectronics with diverse functionalities in different environments. Herein, we reported a p-GaSe/n-HfS

Identifiants

DOI: 10.1021/acsami.2c08430 PMID: 35867860
pubmed: 35867860
doi: 10.1021/acsami.2c08430
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

35927-35939

Auteurs

Zahir Muhammad (Z)

Hefei Innovation Research Institute, School of Microelectronics, Beihang University, Hefei 230013, P. R. China.
ORCID: 0000-0003-2356-5760

Rajibul Islam (R)

International Research Centre Magtop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland.

Yan Wang (Y)

Hefei Innovation Research Institute, School of Microelectronics, Beihang University, Hefei 230013, P. R. China.

Carmine Autieri (C)

International Research Centre Magtop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland.
Consiglio Nazionale delle Ricerche CNR-SPIN, UOS Salerno, I-84084 Fisciano, Salerno, Italy.

Ziyu Lv (Z)

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China.

Bahadur Singh (B)

Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai 400005, India.

Pierre Vallobra (P)

Hefei Innovation Research Institute, School of Microelectronics, Beihang University, Hefei 230013, P. R. China.

Yue Zhang (Y)

Hefei Innovation Research Institute, School of Microelectronics, Beihang University, Hefei 230013, P. R. China.
ORCID: 0000-0001-6893-7199

Ling Zhu (L)

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China.

Weisheng Zhao (W)

Hefei Innovation Research Institute, School of Microelectronics, Beihang University, Hefei 230013, P. R. China.
ORCID: 0000-0001-8088-0404

Classifications MeSH