Effect of the Indentation Load on the Raman Spectra of the InP Crystal.
InP
Raman spectroscopy
indentation
semiconductors
Journal
Materials (Basel, Switzerland)
ISSN: 1996-1944
Titre abrégé: Materials (Basel)
Pays: Switzerland
ID NLM: 101555929
Informations de publication
Date de publication:
22 Jul 2022
22 Jul 2022
Historique:
received:
28
06
2022
revised:
17
07
2022
accepted:
20
07
2022
entrez:
28
7
2022
pubmed:
29
7
2022
medline:
29
7
2022
Statut:
epublish
Résumé
Nanoindentations and the Raman spectroscopy measurements were carried out on the (001) surface of undoped and S-doped InP crystal. The samples were indented with the maximum load ranging from 15 mN to 100 mN. The phase transition B3→B1 was not confirmed by spectroscopic experiments, indicating a plastic deformation mechanism governed by dislocations activity. Increasing the maximum indentation load shifts and the longitudinal and transverse optical Raman bands to lower frequencies reveals a reduction in the elastic energy stored in the plastic zone right below the indentation imprint. Mechanical experiments have shown that a shift in Raman bands occurs alongside the indentation size effect. Indeed, the hardness of undoped and S-doped InP crystal decreases as a function of the maximum indentation load.
Identifiants
pubmed: 35897531
pii: ma15155098
doi: 10.3390/ma15155098
pmc: PMC9331096
pii:
doi:
Types de publication
Journal Article
Langues
eng
Subventions
Organisme : National Science Centre, Poland
ID : 2016/21/B/ST8/02737
Références
Scr Mater. 2016 Jul 15;120(2016):19-22
pubmed: 27325910
Sci Rep. 2018 Jan 19;8(1):1284
pubmed: 29352141
ACS Appl Mater Interfaces. 2020 Aug 12;12(32):36380-36388
pubmed: 32692158