Electric Control of Exchange Bias Effect in FePS

FePS3−Fe5GeTe2 van der Waals heterostructures gate-tuned exchange bias effect interlayer magnetic coupling proton intercalation

Journal

Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070

Informations de publication

Date de publication:
10 Aug 2022
Historique:
pubmed: 2 8 2022
medline: 2 8 2022
entrez: 1 8 2022
Statut: ppublish

Résumé

Manipulating the exchange bias (EB) effect using an electronic gate is a significant goal in spintronics. The emergence of van der Waals (vdW) magnetic heterostructures has provided improved means to study interlayer magnetic coupling, but to date, these heterostructures have not exhibited electrical gate-controlled EB effects. Here, we report electrically controllable EB effects in a vdW heterostructure, FePS

Identifiants

DOI: 10.1021/acs.nanolett.2c01370 PMID: 35912475
pubmed: 35912475
doi: 10.1021/acs.nanolett.2c01370
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

6166-6172

Auteurs

Sultan Albarakati (S)

ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria3001, Australia.
Physics Department, Faculty of Science and Arts, University of Jeddah, P.O. Box 80200, 21589Khulais, Saudi Arabia.

Wen-Qiang Xie (WQ)

Department of Physics, South China University of Technology, Guangzhou510640, China.

Cheng Tan (C)

ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria3001, Australia.

Guolin Zheng (G)

Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences (CAS), Hefei, Anhui230031, China.

Meri Algarni (M)

ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria3001, Australia.

Junbo Li (J)

Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences (CAS), Hefei, Anhui230031, China.

James Partridge (J)

ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria3001, Australia.

Michelle J S Spencer (MJS)

ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria3001, Australia.
ORCID: 0000-0003-4646-1550

Lawrence Farrar (L)

ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria3001, Australia.

Yimin Xiong (Y)

Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences (CAS), Hefei, Anhui230031, China.

Mingliang Tian (M)

Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences (CAS), Hefei, Anhui230031, China.
Department of Physics, School of Physics and Materials Science, Anhui University, Hefei, Anhui230601, China.
ORCID: 0000-0002-0870-995X

Xiaolin Wang (X)

ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), University of Wollongong, Wollongong, New South Wales2500, Australia.
Institute for Superconducting & Electronic Materials, Australian Institute of Innovative Materials, University of Wollongong, Wollongong, New South Wales2500, Australia.
ORCID: 0000-0003-4150-0848

Yu-Jun Zhao (YJ)

Department of Physics, South China University of Technology, Guangzhou510640, China.
ORCID: 0000-0002-6923-1099

Lan Wang (L)

ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria3001, Australia.
ORCID: 0000-0001-7124-2718

Classifications MeSH