High frequency resistive switching behavior of amorphous TiO
Journal
Scientific reports
ISSN: 2045-2322
Titre abrégé: Sci Rep
Pays: England
ID NLM: 101563288
Informations de publication
Date de publication:
13 Aug 2022
13 Aug 2022
Historique:
received:
26
05
2022
accepted:
18
07
2022
entrez:
13
8
2022
pubmed:
14
8
2022
medline:
14
8
2022
Statut:
epublish
Résumé
Resistive switching (RS) of Transition Metal Oxides (TMOs) has become not only an attractive choice for the development of next generation non-volatile memory, but also as a suitable family of materials capable of supporting high-frequency and high-speed switching needed for the next generation wireless communication technologies, such as 6G. The exact mechanism of RS is not yet clearly understood; however, it is widely accepted to be related to the formation and rupture of sub-stoichiometric conductive filaments (Magnéli phases) of the respective oxides upon activation. Here, we examine the switching behaviour of amorphous TiO
Identifiants
pubmed: 35963936
doi: 10.1038/s41598-022-16907-8
pii: 10.1038/s41598-022-16907-8
pmc: PMC9376065
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
13804Informations de copyright
© 2022. The Author(s).
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