Small Charging Energies and

PbTe charging energy g-factor quantum dot selective-area growth spin−orbit interaction

Journal

Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070

Informations de publication

Date de publication:
14 Sep 2022
Historique:
pubmed: 24 8 2022
medline: 24 8 2022
entrez: 23 8 2022
Statut: ppublish

Résumé

PbTe is a semiconductor with promising properties for topological quantum computing applications. Here, we characterize electron quantum dots in PbTe nanowires selectively grown on InP. Charge stability diagrams at zero magnetic field reveal large even-odd spacing between Coulomb blockade peaks, charging energies below 140 μeV and Kondo peaks in odd Coulomb diamonds. We attribute the large even-odd spacing to the large dielectric constant and small effective electron mass of PbTe. By studying the Zeeman-induced level and Kondo splitting in finite magnetic fields, we extract the electron

Identifiants

pubmed: 35998346
doi: 10.1021/acs.nanolett.2c01943
pmc: PMC9479220
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

7049-7056

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Auteurs

Sofieke C Ten Kate (SC)

IBM Research Europe, Säumerstrasse 4, 8803 Rüschlikon, Switzerland.
University of Twente, Drienerlolaan 5, 7522 NB Enschede, Netherlands.

Markus F Ritter (MF)

IBM Research Europe, Säumerstrasse 4, 8803 Rüschlikon, Switzerland.

Andreas Fuhrer (A)

IBM Research Europe, Säumerstrasse 4, 8803 Rüschlikon, Switzerland.

Jason Jung (J)

Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands.

Sander G Schellingerhout (SG)

Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands.

Erik P A M Bakkers (EPAM)

Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands.

Heike Riel (H)

IBM Research Europe, Säumerstrasse 4, 8803 Rüschlikon, Switzerland.

Fabrizio Nichele (F)

IBM Research Europe, Säumerstrasse 4, 8803 Rüschlikon, Switzerland.

Classifications MeSH