Spray Pyrolysis of ZnO:In: Characterization of Growth Mechanism and Interface Analysis on p-Type GaAs and n-Type Si Semiconductor Materials.
ZnO
contact formation
crystal growth
spray pyrolysis
thin film
Journal
ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991
Informations de publication
Date de publication:
14 Sep 2022
14 Sep 2022
Historique:
pubmed:
31
8
2022
medline:
31
8
2022
entrez:
30
8
2022
Statut:
ppublish
Résumé
Sprayed transparent conductive oxides (TCOs) are an interesting alternative to sputtered TCOs for many applications due to the possible high throughput and a simple, atmospheric pressure process of spray deposition. In this work, the growth mechanism of sprayed ZnO:In was analyzed by transmission Kikuchi diffraction (TKD) analysis of the thin film's crystal orientation, which shows a preferred orientation of the growing grains and thus proves that the deposition occurs from the gas phase. It was observed that with increasing thickness of the layer, the average grain size increases and the measured resistivity significantly reduces to ≈5-6 × 10
Identifiants
pubmed: 36041083
doi: 10.1021/acsami.2c07585
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM