Almost Perfect Spin Filtering in Graphene-Based Magnetic Tunnel Junctions.
2D materials
chemical vapor deposition
graphene
magnetic tunnel junctions
magnetoresistance
spin-filtering
spintronics
Journal
ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589
Informations de publication
Date de publication:
27 Sep 2022
27 Sep 2022
Historique:
pubmed:
7
9
2022
medline:
7
9
2022
entrez:
6
9
2022
Statut:
ppublish
Résumé
We report on large spin-filtering effects in epitaxial graphene-based spin valves, strongly enhanced in our specific multilayer case. Our results were obtained by the effective association of chemical vapor deposited (CVD) multilayer graphene with a high quality epitaxial Ni(111) ferromagnetic spin source. We highlight that the Ni(111) spin source electrode crystallinity and metallic state are preserved and stabilized by multilayer graphene CVD growth. Complete nanometric spin valve junctions are fabricated using a local probe indentation process, and spin properties are extracted from the graphene-protected ferromagnetic electrode through the use of a reference Al
Identifiants
pubmed: 36068013
doi: 10.1021/acsnano.2c03625
pmc: PMC9527810
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
14007-14016Références
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