Interplay of the disorder and strain in gallium oxide.
Journal
Scientific reports
ISSN: 2045-2322
Titre abrégé: Sci Rep
Pays: England
ID NLM: 101563288
Informations de publication
Date de publication:
13 Sep 2022
13 Sep 2022
Historique:
received:
19
05
2022
accepted:
25
08
2022
entrez:
13
9
2022
pubmed:
14
9
2022
medline:
14
9
2022
Statut:
epublish
Résumé
Ion irradiation is a powerful tool to tune properties of semiconductors and, in particular, of gallium oxide (Ga
Identifiants
pubmed: 36100627
doi: 10.1038/s41598-022-19191-8
pii: 10.1038/s41598-022-19191-8
pmc: PMC9470558
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
15366Subventions
Organisme : Norges Forskningsråd
ID : 295864
Organisme : Russian Science Foundation
ID : 22-19-00166
Informations de copyright
© 2022. The Author(s).
Références
Science. 2012 Jun 8;336(6086):1283-6
pubmed: 22679092
Phys Rev Lett. 2018 May 25;120(21):216101
pubmed: 29883156
Nano Lett. 2020 Dec 9;20(12):8689-8695
pubmed: 33175553
Phys Rev Lett. 2022 Jan 7;128(1):015704
pubmed: 35061456