On-site growth method of 3D structured multi-layered graphene on silicon nanowires.


Journal

Nanoscale advances
ISSN: 2516-0230
Titre abrégé: Nanoscale Adv
Pays: England
ID NLM: 101738708

Informations de publication

Date de publication:
15 Apr 2020
Historique:
received: 05 02 2020
accepted: 22 03 2020
entrez: 22 9 2022
pubmed: 23 3 2020
medline: 23 3 2020
Statut: epublish

Résumé

An experimental method is described in which a orderly 3D array of graphene sheets is grown to conform to the shape of an underlying nanowire (NW) substrate that remains on-site. The procedure uses a sacrificial nickel catalyst-based CVD growth process that is capable of producing graphene onto an insulating SiO

Identifiants

pubmed: 36132294
doi: 10.1039/d0na00098a
pii: d0na00098a
pmc: PMC9419803
doi:

Types de publication

Journal Article

Langues

eng

Pagination

1718-1725

Informations de copyright

This journal is © The Royal Society of Chemistry.

Déclaration de conflit d'intérêts

There are no conflicts to declare.

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Auteurs

Steaphan Mark Wallace (SM)

International Center for Materials Nanoarchitectonics, National Institute for Materials Science Tsukuba 305-0044 Japan FUKATA.Naoki@nims.go.jp steaphan.Wallace@gmail.com.
Graduate School of Pure and Applied Sciences, University of Tsukuba Tsukuba 305-8573 Japan.

Wipakorn Jevasuwan (W)

International Center for Materials Nanoarchitectonics, National Institute for Materials Science Tsukuba 305-0044 Japan FUKATA.Naoki@nims.go.jp steaphan.Wallace@gmail.com.

Naoki Fukata (N)

International Center for Materials Nanoarchitectonics, National Institute for Materials Science Tsukuba 305-0044 Japan FUKATA.Naoki@nims.go.jp steaphan.Wallace@gmail.com.
Graduate School of Pure and Applied Sciences, University of Tsukuba Tsukuba 305-8573 Japan.

Classifications MeSH