Synthesis and characterization of Ge-core/a-Si-shell nanowires with conformal shell thickness deposited after gold removal for high-mobility p-channel field-effect transistors.
Journal
Nanoscale advances
ISSN: 2516-0230
Titre abrégé: Nanoscale Adv
Pays: England
ID NLM: 101738708
Informations de publication
Date de publication:
15 Apr 2020
15 Apr 2020
Historique:
received:
10
01
2020
accepted:
06
03
2020
entrez:
22
9
2022
pubmed:
11
3
2020
medline:
11
3
2020
Statut:
epublish
Résumé
Ge-core/a-Si-shell nanowires were synthesized in three consecutive steps. Nominally undoped crystalline Ge nanowires were first grown using a vapor-liquid-solid growth mechanism, followed by gold catalyst removal in an etching solution and deposition of a thin layer of amorphous silicon on the nanowire surface using a chemical vapor deposition method. Catalyst removal is necessary to avoid catalyst melting during temperature increase prior to a-Si shell deposition. Field effect transistors based on Ge-core/a-Si-shell nanowires exhibited p-channel depletion-mode characteristics as a result of free hole accumulation in the Ge channel. Scaled on-currents and transconductances up to 3.1 mA μm
Identifiants
pubmed: 36132315
doi: 10.1039/d0na00023j
pii: d0na00023j
pmc: PMC9419733
doi:
Types de publication
Journal Article
Langues
eng
Pagination
1465-1472Informations de copyright
This journal is © The Royal Society of Chemistry.
Déclaration de conflit d'intérêts
There are no conflicts of interest to declare.
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