Synthesis and characterization of Ge-core/a-Si-shell nanowires with conformal shell thickness deposited after gold removal for high-mobility p-channel field-effect transistors.


Journal

Nanoscale advances
ISSN: 2516-0230
Titre abrégé: Nanoscale Adv
Pays: England
ID NLM: 101738708

Informations de publication

Date de publication:
15 Apr 2020
Historique:
received: 10 01 2020
accepted: 06 03 2020
entrez: 22 9 2022
pubmed: 11 3 2020
medline: 11 3 2020
Statut: epublish

Résumé

Ge-core/a-Si-shell nanowires were synthesized in three consecutive steps. Nominally undoped crystalline Ge nanowires were first grown using a vapor-liquid-solid growth mechanism, followed by gold catalyst removal in an etching solution and deposition of a thin layer of amorphous silicon on the nanowire surface using a chemical vapor deposition method. Catalyst removal is necessary to avoid catalyst melting during temperature increase prior to a-Si shell deposition. Field effect transistors based on Ge-core/a-Si-shell nanowires exhibited p-channel depletion-mode characteristics as a result of free hole accumulation in the Ge channel. Scaled on-currents and transconductances up to 3.1 mA μm

Identifiants

pubmed: 36132315
doi: 10.1039/d0na00023j
pii: d0na00023j
pmc: PMC9419733
doi:

Types de publication

Journal Article

Langues

eng

Pagination

1465-1472

Informations de copyright

This journal is © The Royal Society of Chemistry.

Déclaration de conflit d'intérêts

There are no conflicts of interest to declare.

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Auteurs

Marolop Dapot Krisman Simanullang (MDK)

Quantum Nanoelectronics Research Center, Tokyo Institute of Technology 2-12-1 Ookayama, Meguro Tokyo 152-8552 Japan marolop.simanullang@gmail.com soda@pe.titech.ac.jp.

G Bimananda M Wisna (GBM)

Department of Engineering Physics, Bandung Institute of Technology Bandung 40132 Indonesia wisna.gde@gmail.com.

Koichi Usami (K)

Quantum Nanoelectronics Research Center, Tokyo Institute of Technology 2-12-1 Ookayama, Meguro Tokyo 152-8552 Japan marolop.simanullang@gmail.com soda@pe.titech.ac.jp.

Shunri Oda (S)

Quantum Nanoelectronics Research Center, Tokyo Institute of Technology 2-12-1 Ookayama, Meguro Tokyo 152-8552 Japan marolop.simanullang@gmail.com soda@pe.titech.ac.jp.

Classifications MeSH