Physical mechanisms involved in the formation and operation of memory devices based on a monolayer of gold nanoparticle-polythiophene hybrid materials.
Journal
Nanoscale advances
ISSN: 2516-0230
Titre abrégé: Nanoscale Adv
Pays: England
ID NLM: 101738708
Informations de publication
Date de publication:
10 Jul 2019
10 Jul 2019
Historique:
received:
06
05
2019
accepted:
23
05
2019
entrez:
22
9
2022
pubmed:
24
5
2019
medline:
24
5
2019
Statut:
epublish
Résumé
Understanding the physical and chemical mechanisms occurring during the forming process and operation of an organic resistive memory device is a requisite for better performance. Various mechanisms were suggested in vertically stacked memory structures, but the analysis remains indirect and needs destructive characterization (
Identifiants
pubmed: 36132737
doi: 10.1039/c9na00285e
pii: c9na00285e
pmc: PMC9417853
doi:
Types de publication
Journal Article
Langues
eng
Pagination
2718-2726Informations de copyright
This journal is © The Royal Society of Chemistry.
Déclaration de conflit d'intérêts
There are no conflicts to declare.
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