Does carrier velocity saturation help to enhance


Journal

Nanoscale advances
ISSN: 2516-0230
Titre abrégé: Nanoscale Adv
Pays: England
ID NLM: 101738708

Informations de publication

Date de publication:
16 Sep 2020
Historique:
received: 20 11 2019
accepted: 23 07 2020
entrez: 22 9 2022
pubmed: 24 7 2020
medline: 24 7 2020
Statut: epublish

Résumé

It has been argued that current saturation in graphene field-effect transistors (GFETs) is needed to get optimal maximum oscillation frequency (

Identifiants

pubmed: 36132766
doi: 10.1039/c9na00733d
pii: c9na00733d
pmc: PMC9419022
doi:

Types de publication

Journal Article

Langues

eng

Pagination

4179-4186

Informations de copyright

This journal is © The Royal Society of Chemistry.

Déclaration de conflit d'intérêts

There are no conflicts to declare.

Références

ACS Appl Mater Interfaces. 2016 Oct 5;8(39):25645-25649
pubmed: 27640732
Phys Rev Lett. 2011 Jun 24;106(25):256801
pubmed: 21770659
Sci Rep. 2017 May 25;7(1):2419
pubmed: 28546634
Nano Lett. 2011 Sep 14;11(9):3690-3
pubmed: 21805988
Sci Rep. 2016 Oct 24;6:35717
pubmed: 27775009
Appl Phys Lett. 2017 Dec 4;111(23):233504
pubmed: 29249833
Phys Rev Lett. 2008 Aug 29;101(9):096802
pubmed: 18851636
Nature. 2005 Nov 10;438(7065):197-200
pubmed: 16281030
Small. 2012 Feb 6;8(3):356-61
pubmed: 22287083
Nat Nanotechnol. 2008 Nov;3(11):654-9
pubmed: 18989330
Nano Lett. 2013 Mar 13;13(3):942-7
pubmed: 23418924
Nanotechnology. 2017 Dec 1;28(48):485203
pubmed: 28972503
Nanoscale. 2015 May 14;7(18):8261-83
pubmed: 25898786

Auteurs

Pedro C Feijoo (PC)

Universitat Autònoma de Barcelona 08193 Cerdanyola del Vallès Spain PedroCarlos.Feijoo@uab.cat.

Francisco Pasadas (F)

Universitat Autònoma de Barcelona 08193 Cerdanyola del Vallès Spain PedroCarlos.Feijoo@uab.cat.

Marlene Bonmann (M)

Chalmers University of Technology SE-41296 Gothenburg Sweden.

Muhammad Asad (M)

Chalmers University of Technology SE-41296 Gothenburg Sweden.

Xinxin Yang (X)

Chalmers University of Technology SE-41296 Gothenburg Sweden.

Andrey Generalov (A)

Aalto University FI-00076 Helsinki Finland.

Andrei Vorobiev (A)

Chalmers University of Technology SE-41296 Gothenburg Sweden.

Luca Banszerus (L)

2nd Institute of Physics, RWTH Aachen University 52074 Aachen Germany.

Christoph Stampfer (C)

2nd Institute of Physics, RWTH Aachen University 52074 Aachen Germany.

Martin Otto (M)

Advanced Microelectronic Center Aachen, AMO GmbH 52074 Aachen Germany.

Daniel Neumaier (D)

Advanced Microelectronic Center Aachen, AMO GmbH 52074 Aachen Germany.

Jan Stake (J)

Chalmers University of Technology SE-41296 Gothenburg Sweden.

David Jiménez (D)

Universitat Autònoma de Barcelona 08193 Cerdanyola del Vallès Spain PedroCarlos.Feijoo@uab.cat.

Classifications MeSH