Graphene nanopattern as a universal epitaxy platform for single-crystal membrane production and defect reduction.


Journal

Nature nanotechnology
ISSN: 1748-3395
Titre abrégé: Nat Nanotechnol
Pays: England
ID NLM: 101283273

Informations de publication

Date de publication:
Oct 2022
Historique:
received: 16 02 2022
accepted: 22 07 2022
pubmed: 23 9 2022
medline: 23 9 2022
entrez: 22 9 2022
Statut: ppublish

Résumé

Heterogeneous integration of single-crystal materials offers great opportunities for advanced device platforms and functional systems

Identifiants

pubmed: 36138198
doi: 10.1038/s41565-022-01200-6
pii: 10.1038/s41565-022-01200-6
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

1054-1059

Subventions

Organisme : United States Department of Defense | Defense Advanced Research Projects Agency (DARPA)
ID : 029584-00001
Organisme : United States Department of Defense | United States Air Force | AFMC | Air Force Research Laboratory (AFRL)
ID : FA9453-18-2-0017
Organisme : NSF | Directorate for Mathematical & Physical Sciences | Division of Materials Research (DMR)
ID : DMR-2011876

Informations de copyright

© 2022. The Author(s), under exclusive licence to Springer Nature Limited.

Références

Shulaker, M. M. et al. Three-dimensional integration of nanotechnologies for computing and data storage on a single chip. Nature 547, 74–78 (2017).
doi: 10.1038/nature22994
Kunert, B. et al. How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches. Semicond. Sci. Technol. 33, 093002 (2018).
doi: 10.1088/1361-6641/aad655
Kum, H. et al. Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices. Nat. Electron. 2, 439–450 (2019).
doi: 10.1038/s41928-019-0314-2
Chen, S. et al. Electrically pumped continuous-wave III–V quantum dot lasers on silicon. Nat. Photon. 10, 307–311 (2016).
doi: 10.1038/nphoton.2016.21
Li, Q. & Lau, K. M. Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics. Prog. Cryst. Growth Charact. Mater. 63, 105–120 (2017).
doi: 10.1016/j.pcrysgrow.2017.10.001
Yoon, J. et al. GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies. Nature 465, 329–333 (2010).
doi: 10.1038/nature09054
Raj, V. et al. Layer transfer by controlled spalling. J. Phys. D: Appl. Phys. 46, 152002 (2013).
doi: 10.1088/0022-3727/46/15/152002
Jain, N. et al. III–V solar cells grown on unpolished and reusable spalled Ge substrates. IEEE J. Photovolt. 8, 1384–1389 (2018).
doi: 10.1109/JPHOTOV.2018.2851283
Yablonovitch, E., Gmitter, T., Harbison, J. P. & Bhat, R. Extreme selectivity in the lift‐off of epitaxial GaAs films. Appl. Phys. Lett. 51, 2222 (1987).
doi: 10.1063/1.98946
Cheng, C. W. et al. Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics. Nat. Commun. 4, 1577 (2013).
doi: 10.1038/ncomms2583
Wong, W. S., Sands, T. & Cheung, N. W. Damage-free separation of GaN thin films from sapphire substrates. Appl. Phys. Lett. 72, 599 (1998).
doi: 10.1063/1.120816
Kim, Y. et al. Remote epitaxy through graphene enables two-dimensional material-based layer transfer. Nature 544, 340–343 (2017).
doi: 10.1038/nature22053
Shim, J. et al. Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials. Science 362, 665–670 (2018).
doi: 10.1126/science.aat8126
Kim, J. et al. Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene. Nat. Commun. 5, 4836 (2014).
doi: 10.1038/ncomms5836
Kong, W. et al. Polarity governs atomic interaction through two-dimensional materials. Nat. Mater. 17, 999–1004 (2018).
doi: 10.1038/s41563-018-0176-4
Kum, H. S. et al. Heterogeneous integration of single-crystalline complex-oxide membranes. Nature 578, 75–81 (2020).
doi: 10.1038/s41586-020-1939-z
Qiao, K. et al. Graphene buffer layer on SiC as a release layer for high-quality freestanding semiconductor membranes. Nano Lett. 21, 4013–4020 (2021).
doi: 10.1021/acs.nanolett.1c00673
Kim, H. et al. Impact of 2D–3D heterointerface on remote epitaxial interaction through graphene. ACS Nano 15, 10587–10596 (2021).
doi: 10.1021/acsnano.1c03296
Kazi, Z. I., Thilakan, P., Egawa, T., Umeno, M. & Jimbo, T. Realization of GaAs/AlGaAs lasers on Si substrates using epitaxial lateral overgrowth by metalorganic chemical vapor deposition. Jpn. J. Appl. Phys. 40, 4903–4906 (2001).
doi: 10.1143/JJAP.40.4903
Suo, Z. & Hutchinson, J. W. Steady-state cracking in brittle substrates beneath adherent films. Int. J. Solids Struct. 25, 1337–1353 (1989).
doi: 10.1016/0020-7683(89)90096-6
Lee, J. H. et al. Wafer-scale growth of single-crystal monolayer graphene on reusable hydrogen-terminated germanium. Science 344, 286–289 (2014).
doi: 10.1126/science.1252268
Björkman, T., Gulans, A., Krasheninnikov, A. V. & Nieminen, R. M. Van der Waals bonding in layered compounds from advanced density-functional first-principles calculations. Phys. Rev. Lett. 108, 235502 (2012).
doi: 10.1103/PhysRevLett.108.235502
Faucher, J., Masuda, T. & Lee, M. L. Initiation strategies for simultaneous control of antiphase domains and stacking faults in GaAs solar cells on Ge. J. Vac. Sci. Technol. B 34, 041203 (2016).
doi: 10.1116/1.4945659
Rio Calvo, M. et al. Crystal phase control during epitaxial hybridization of III-V semiconductors with silicon. Adv. Electron. Mater. 8, 2100777 (2022).
doi: 10.1002/aelm.202100777
Zhong, L. et al. Evidence of spontaneous formation of steps on silicon (100). Phys. Rev. B 54, R2304 (1996).
doi: 10.1103/PhysRevB.54.R2304
Bae, S. H. et al. Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy. Nat. Nanotechnol. 15, 272–276 (2020).
doi: 10.1038/s41565-020-0633-5
Jiang, J. et al. Carrier lifetime enhancement in halide perovskite via remote epitaxy. Nat. Commun. 10, 4145 (2019).
doi: 10.1038/s41467-019-12056-1
Asai, H. & Ando, S. Lateral growth process of GaAs over tungsten gratings by metalorganic chemical vapor deposition. J. Electrochem. Soc. 132, 2445–2453 (1985).
doi: 10.1149/1.2113597
Hsu, C.-W., Chen, Y.-F. & Su, Y.-K. Nanoepitaxy of InAs on geometric patterned Si (001). ECS J. Solid State Sci. Technol. 1, P140–P143 (2012).
doi: 10.1149/2.008203jss
Zaima, K., Hashimoto, R., Ezaki, M., Nishioka, M. & Arakawa, Y. Dislocation reduction of GaSb on GaAs by metalorganic chemical vapor deposition with epitaxial lateral overgrowth. J. Cryst. Growth 310, 4843–4845 (2008).
doi: 10.1016/j.jcrysgro.2008.07.040
Kunert, B. et al. Study of planar defect filtering in InP grown on Si by epitaxial lateral overgrowth. Opt. Mater. Express 3, 1960–1973 (2013).
doi: 10.1364/OME.3.001960
Ironside, D. J., Skipper, A. M., García, A. M. & Bank, S. R. Review of lateral epitaxial overgrowth of buried dielectric structures for electronics and photonics. Prog. Quantum Electron. 77, 100316 (2021).
doi: 10.1016/j.pquantelec.2021.100316
McMahon, W. E., Vaisman, M., Zimmerman, J. D., Tamboli, A. C. & Warren, E. L. Perspective: fundamentals of coalescence-related dislocations, applied to selective-area growth and other epitaxial films. APL Mater. 6, 120903 (2018).
doi: 10.1063/1.5047945
Kim, H. et al. Role of transferred graphene on atomic interaction of GaAs for remote epitaxy. J. Appl. Phys. 130, 174901 (2021).
doi: 10.1063/5.0064232
Hÿtch, M. J., Snoeck, E. & Kilaas, R. Quantitative measurement of displacement and strain fields from HREM micrographs. Ultramicroscopy 74, 131–146 (1998).
doi: 10.1016/S0304-3991(98)00035-7
Plimpton, S. Fast parallel algorithms for short-range molecular dynamics. J. Comput. Phys. 117, 1–19 (1995).
doi: 10.1006/jcph.1995.1039
Zhang, Y., Huang, L. & Shi, Y. Silica glass toughened by consolidation of glassy nanoparticles. Nano Lett. 19, 5222–5228 (2019).
doi: 10.1021/acs.nanolett.9b01634
Ethier, S. & Lewis, L. J. Epitaxial growth of Si
doi: 10.1557/JMR.1992.2817
Bourque, A. J. & Rutledge, G. C. Empirical potential for molecular simulation of graphene nanoplatelets. J. Chem. Phys. 148, 144709 (2018).
doi: 10.1063/1.5023117
Nosé, S. A unified formulation of the constant temperature molecular dynamics methods. J. Chem. Phys. 81, 511 (1998).
doi: 10.1063/1.447334
Stukowski, A. Visualization and analysis of atomistic simulation data with OVITO—the open visualization tool. Modelling Simul. Mater. Sci. Eng. 18, 015012 (2009).

Auteurs

Hyunseok Kim (H)

Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.

Sangho Lee (S)

Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.

Jiho Shin (J)

Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.

Menglin Zhu (M)

Department of Materials Science and Engineering, The Ohio State University, Columbus, OH, USA.

Marx Akl (M)

Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, USA.

Kuangye Lu (K)

Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.

Ne Myo Han (NM)

Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.

Yongmin Baek (Y)

Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA.

Celesta S Chang (CS)

Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.

Jun Min Suh (JM)

Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.

Ki Seok Kim (KS)

Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.

Bo-In Park (BI)

Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.

Yanming Zhang (Y)

Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA.

Chanyeol Choi (C)

Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA.

Heechang Shin (H)

School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea.

He Yu (H)

Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.

Yuan Meng (Y)

Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, St. Louis, MO, USA.

Seung-Il Kim (SI)

Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon, Republic of Korea.

Seungju Seo (S)

Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.

Kyusang Lee (K)

Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA.

Hyun S Kum (HS)

School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea.

Jae-Hyun Lee (JH)

Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon, Republic of Korea.

Jong-Hyun Ahn (JH)

School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea.

Sang-Hoon Bae (SH)

Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, St. Louis, MO, USA. sbae22@wustl.edu.
Institute of Materials Science and Engineering, Washington University in Saint Louis, St. Louis, MO, USA. sbae22@wustl.edu.

Jinwoo Hwang (J)

Department of Materials Science and Engineering, The Ohio State University, Columbus, OH, USA. hwang.458@osu.edu.

Yunfeng Shi (Y)

Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA. shiy2@rpi.edu.

Jeehwan Kim (J)

Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA. jeehwan@mit.edu.
Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA. jeehwan@mit.edu.
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA. jeehwan@mit.edu.

Classifications MeSH