Experimental Observation of ABCB Stacked Tetralayer Graphene.
Raman spectroscopy
few-layer graphene
nanoinfrared imaging
optical conductivity
rhombohedral
scanning near-field optical microscopy
stacking order
Journal
ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589
Informations de publication
Date de publication:
25 Oct 2022
25 Oct 2022
Historique:
pubmed:
8
10
2022
medline:
8
10
2022
entrez:
7
10
2022
Statut:
ppublish
Résumé
In tetralayer graphene, three inequivalent layer stackings should exist; however, only rhombohedral (ABCA) and Bernal (ABAB) stacking have so far been observed. The three stacking sequences differ in their electronic structure, with the elusive third stacking (ABCB) being unique as it is predicted to exhibit an intrinsic bandgap as well as locally flat bands around the K points. Here, we use scattering-type scanning near-field optical microscopy and confocal Raman microscopy to identify and characterize domains of ABCB stacked tetralayer graphene. We differentiate between the three stacking sequences by addressing characteristic interband contributions in the optical conductivity between 0.28 and 0.56 eV with amplitude and phase-resolved near-field nanospectroscopy. By normalizing adjacent flakes to each other, we achieve good agreement between theory and experiment, allowing for the unambiguous assignment of ABCB domains in tetralayer graphene. These results establish near-field spectroscopy at the interband transitions as a semiquantitative tool, enabling the recognition of ABCB domains in tetralayer graphene flakes and, therefore, providing a basis to study correlation physics of this exciting phase.
Identifiants
pubmed: 36205460
doi: 10.1021/acsnano.2c06053
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM