Reservoir Computing with Charge-Trap Memory Based on a MoS
2D semiconductors
charge-trap memory
neural networks
neuromorphic engineering
reservoir computing
Journal
Advanced materials (Deerfield Beach, Fla.)
ISSN: 1521-4095
Titre abrégé: Adv Mater
Pays: Germany
ID NLM: 9885358
Informations de publication
Date de publication:
Sep 2023
Sep 2023
Historique:
revised:
15
09
2022
received:
14
06
2022
medline:
13
10
2022
pubmed:
13
10
2022
entrez:
12
10
2022
Statut:
ppublish
Résumé
Novel memory devices are essential for developing low power, fast, and accurate in-memory computing and neuromorphic engineering concepts that can compete with the conventional complementary metal-oxide-semiconductor (CMOS) digital processors. 2D semiconductors provide a novel platform for advanced semiconductors with atomic thickness, low-current operation, and capability of 3D integration. This work presents a charge-trap memory (CTM) device with a MoS
Identifiants
pubmed: 36222391
doi: 10.1002/adma.202205381
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
e2205381Subventions
Organisme : European Union's Horizon 2020
ID : 824164
Informations de copyright
© 2022 The Authors. Advanced Materials published by Wiley-VCH GmbH.
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