Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology.
Electrical and electronic engineering
Optical sensors
Journal
Microsystems & nanoengineering
ISSN: 2055-7434
Titre abrégé: Microsyst Nanoeng
Pays: England
ID NLM: 101695458
Informations de publication
Date de publication:
2022
2022
Historique:
received:
10
11
2021
revised:
31
05
2022
accepted:
24
07
2022
entrez:
28
10
2022
pubmed:
29
10
2022
medline:
29
10
2022
Statut:
epublish
Résumé
This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS, which includes an image sensor with 64 active pixels and a total of 1263 transistors on a 100 mm
Identifiants
pubmed: 36304906
doi: 10.1038/s41378-022-00446-3
pii: 446
pmc: PMC9592596
doi:
Types de publication
Journal Article
Langues
eng
Pagination
114Informations de copyright
© The Author(s) 2022.
Déclaration de conflit d'intérêts
Competing interestsThe authors declare no competing interests.
Références
Sensors (Basel). 2019 Dec 18;20(1):
pubmed: 31861428
Opt Lett. 2006 Jun 1;31(11):1591-3
pubmed: 16688230
Sensors (Basel). 2022 Jan 18;22(3):
pubmed: 35161472
Opt Express. 2010 May 24;18(11):11713-9
pubmed: 20589031
Microsyst Nanoeng. 2016 Oct 10;2:16048
pubmed: 31057836