A new TCAD simulation method for direct CMOS electron detectors optimization.
CMOS
CMOS integrated circuits
Electrons
Image sensor
Semiconductor detectors
Semiconductor device modelling
Simulation
Transmission electron microscopy
Journal
Ultramicroscopy
ISSN: 1879-2723
Titre abrégé: Ultramicroscopy
Pays: Netherlands
ID NLM: 7513702
Informations de publication
Date de publication:
Jan 2023
Jan 2023
Historique:
received:
02
06
2022
revised:
22
09
2022
accepted:
13
10
2022
pubmed:
14
11
2022
medline:
14
11
2022
entrez:
13
11
2022
Statut:
ppublish
Résumé
A custom CMOS image sensor hardened by design is characterized in a transmission electron microscope, with the aim to extract basic parameters such as the quantum efficiency, the modulation transfer function and finally the detective quantum efficiency. In parallel, a new methodology based on the combination of Monte Carlo simulation of electron distributions and TCAD simulations is proposed and performed on the same detector, and for the first time the basic parameters of a direct CMOS electron detector are extracted thanks to the TCAD. The methodology is validated by means of the comparison between experimental and simulation results. This simulation method may be used for the development of future electron detectors.
Identifiants
pubmed: 36371857
pii: S0304-3991(22)00147-4
doi: 10.1016/j.ultramic.2022.113628
pii:
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
113628Informations de copyright
Copyright © 2022 Elsevier B.V. All rights reserved.
Déclaration de conflit d'intérêts
Declaration of Competing Interest The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.