High-lying valley-polarized trions in 2D semiconductors.
Journal
Nature communications
ISSN: 2041-1723
Titre abrégé: Nat Commun
Pays: England
ID NLM: 101528555
Informations de publication
Date de publication:
15 Nov 2022
15 Nov 2022
Historique:
received:
29
04
2022
accepted:
07
10
2022
entrez:
15
11
2022
pubmed:
16
11
2022
medline:
16
11
2022
Statut:
epublish
Résumé
Optoelectronic functionalities of monolayer transition-metal dichalcogenide (TMDC) semiconductors are characterized by the emergence of externally tunable, correlated many-body complexes arising from strong Coulomb interactions. However, the vast majority of such states susceptible to manipulation has been limited to the region in energy around the fundamental bandgap. We report the observation of tightly bound, valley-polarized, UV-emissive trions in monolayer TMDC transistors: quasiparticles composed of an electron from a high-lying conduction band with negative effective mass, a hole from the first valence band, and an additional charge from a band-edge state. These high-lying trions have markedly different optical selection rules compared to band-edge trions and show helicity opposite to that of the excitation. An electrical gate controls both the oscillator strength and the detuning of the excitonic transitions, and therefore the Rabi frequency of the strongly driven three-level system, enabling excitonic quantum interference to be switched on and off in a deterministic fashion.
Identifiants
pubmed: 36379952
doi: 10.1038/s41467-022-33939-w
pii: 10.1038/s41467-022-33939-w
pmc: PMC9666447
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
6980Subventions
Organisme : Deutsche Forschungsgemeinschaft (German Research Foundation)
ID : 443378379
Organisme : Deutsche Forschungsgemeinschaft (German Research Foundation)
ID : 314695032
Organisme : Deutsche Forschungsgemeinschaft (German Research Foundation)
ID : 314695032
Organisme : Deutsche Forschungsgemeinschaft (German Research Foundation)
ID : 443378379
Organisme : Deutsche Forschungsgemeinschaft (German Research Foundation)
ID : 314695032
Organisme : Deutsche Forschungsgemeinschaft (German Research Foundation)
ID : 390858490
Organisme : Deutsche Forschungsgemeinschaft (German Research Foundation)
ID : 314695032
Organisme : Ministry of Education, Culture, Sports, Science and Technology (MEXT)
ID : JPMXP0112101001
Organisme : Ministry of Education, Culture, Sports, Science and Technology (MEXT)
ID : JPMXP0112101001
Organisme : MEXT | Japan Society for the Promotion of Science (JSPS)
ID : 19H05790, JP20H00354
Organisme : MEXT | Japan Society for the Promotion of Science (JSPS)
ID : 19H05790, JP20H00354
Organisme : Russian Science Foundation (RSF)
ID : 19-12-00051
Informations de copyright
© 2022. The Author(s).
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