Quantum transport evidence of isolated topological nodal-line fermions.


Journal

Nature communications
ISSN: 2041-1723
Titre abrégé: Nat Commun
Pays: England
ID NLM: 101528555

Informations de publication

Date de publication:
23 Nov 2022
Historique:
received: 02 03 2021
accepted: 08 11 2022
entrez: 23 11 2022
pubmed: 24 11 2022
medline: 24 11 2022
Statut: epublish

Résumé

Anomalous transport responses, dictated by the nontrivial band topology, are the key for application of topological materials to advanced electronics and spintronics. One promising platform is topological nodal-line semimetals due to their rich topology and exotic physical properties. However, their transport signatures have often been masked by the complexity in band crossings or the coexisting topologically trivial states. Here we show that, in slightly hole-doped SrAs

Identifiants

pubmed: 36418308
doi: 10.1038/s41467-022-34845-x
pii: 10.1038/s41467-022-34845-x
pmc: PMC9684491
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

7188

Subventions

Organisme : National Research Foundation of Korea (NRF)
ID : NRF-2020R1A2C2102469
Organisme : National Research Foundation of Korea (NRF)
ID : NRF-2017R1A5A1014862
Organisme : National Research Foundation of Korea (NRF)
ID : NRF-2020K1A3A7A09080364
Organisme : National Research Foundation of Korea (NRF)
ID : 2022R1A2C3009731
Organisme : National Research Foundation of Korea (NRF)
ID : 2022H1D3A3A01077468

Informations de copyright

© 2022. The Author(s).

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Auteurs

Hoil Kim (H)

Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, 37673, Korea.
Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea.

Jong Mok Ok (JM)

Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, 37673, Korea.
Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea.
Department of Physics, Pusan National University, Busan, 46241, Korea.

Seyeong Cha (S)

Department of Physics, Yonsei University, Seoul, 03722, Korea.

Bo Gyu Jang (BG)

Department of Chemistry, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea.

Chang Il Kwon (CI)

Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, 37673, Korea.
Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea.

Yoshimitsu Kohama (Y)

Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba, 277-8581, Japan.

Koichi Kindo (K)

Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba, 277-8581, Japan.

Won Joon Cho (WJ)

Material Research Center, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics Co., Ltd, Suwon-si, Gyeonggi-do, 16678, Korea.

Eun Sang Choi (ES)

National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, 32310, USA.

Youn Jung Jo (YJ)

Department of Physics, Kyungpook National University, Daegu, Korea.

Woun Kang (W)

Department of Physics, Ewha Womans University, Seoul, 03760, Republic of Korea.

Ji Hoon Shim (JH)

Department of Chemistry, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea.

Keun Su Kim (KS)

Department of Physics, Yonsei University, Seoul, 03722, Korea.

Jun Sung Kim (JS)

Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, 37673, Korea. js.kim@postech.ac.kr.
Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea. js.kim@postech.ac.kr.

Classifications MeSH