Solution Atomic Layer Deposition of Smooth, Continuous, Crystalline Metal-Organic Framework Thin Films.


Journal

Chemistry of materials : a publication of the American Chemical Society
ISSN: 0897-4756
Titre abrégé: Chem Mater
Pays: United States
ID NLM: 9884133

Informations de publication

Date de publication:
22 Nov 2022
Historique:
received: 11 04 2022
revised: 14 09 2022
entrez: 28 11 2022
pubmed: 29 11 2022
medline: 29 11 2022
Statut: ppublish

Résumé

For the first time, a procedure has been established for the growth of surface-anchored metal-organic framework (SURMOF) copper(II) benzene-1,4-dicarboxylate (Cu-BDC) thin films of thickness control with single molecule accuracy. For this, we exploit the novel method solution atomic layer deposition (sALD). The sALD growth rate has been determined at 4.5 Å per cycle. The compact and dense SURMOF films grown at room temperature by sALD possess a vastly superior film thickness uniformity than those deposited by conventional solution-based techniques, such as dipping and spraying while featuring clear crystallinity from 100 nm thickness. The highly controlled layer-by-layer growth mechanism of sALD proves crucial to prevent unwanted side reactions such as Ostwald ripening or detrimental island growth, ensuring continuous Cu-BDC film coverage. This successful demonstration of sALD-grown compact continuous Cu-BDC SURMOF films is a paradigm change and provides a key advancement enabling a multitude of applications that require continuous and ultrathin coatings while maintaining tight film thickness specifications, which were previously unattainable with conventional solution-based growth methods.

Identifiants

pubmed: 36439317
doi: 10.1021/acs.chemmater.2c01102
pmc: PMC9686130
doi:

Types de publication

Journal Article

Langues

eng

Pagination

9836-9843

Informations de copyright

© 2022 The Authors. Published by American Chemical Society.

Déclaration de conflit d'intérêts

The authors declare no competing financial interest.

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Auteurs

Maïssa K S Barr (MKS)

Friedrich-Alexander-Universität Erlangen-Nürnberg, Chair Chemistry of Thin Film Materials, IZNF, Cauerstr. 3, 91058 Erlangen, Germany.

Soheila Nadiri (S)

Friedrich-Alexander-Universität Erlangen-Nürnberg, Chair Chemistry of Thin Film Materials, IZNF, Cauerstr. 3, 91058 Erlangen, Germany.

Dong-Hui Chen (DH)

Karlsruhe Institute of Technology, Institute of Functional Interfaces (IFG), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany.

Peter G Weidler (PG)

Karlsruhe Institute of Technology, Institute of Functional Interfaces (IFG), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany.

Sebastian Bochmann (S)

Friedrich-Alexander-Universität Erlangen-Nürnberg, Chair Chemistry of Thin Film Materials, IZNF, Cauerstr. 3, 91058 Erlangen, Germany.

Helmut Baumgart (H)

Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, Virginia 23529, United States.
Applied Research Center at Jefferson Labs, Newport News, Virginia 23606, United States.

Julien Bachmann (J)

Friedrich-Alexander-Universität Erlangen-Nürnberg, Chair Chemistry of Thin Film Materials, IZNF, Cauerstr. 3, 91058 Erlangen, Germany.

Engelbert Redel (E)

Karlsruhe Institute of Technology, Institute of Functional Interfaces (IFG), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany.

Classifications MeSH