Solution Atomic Layer Deposition of Smooth, Continuous, Crystalline Metal-Organic Framework Thin Films.
Journal
Chemistry of materials : a publication of the American Chemical Society
ISSN: 0897-4756
Titre abrégé: Chem Mater
Pays: United States
ID NLM: 9884133
Informations de publication
Date de publication:
22 Nov 2022
22 Nov 2022
Historique:
received:
11
04
2022
revised:
14
09
2022
entrez:
28
11
2022
pubmed:
29
11
2022
medline:
29
11
2022
Statut:
ppublish
Résumé
For the first time, a procedure has been established for the growth of surface-anchored metal-organic framework (SURMOF) copper(II) benzene-1,4-dicarboxylate (Cu-BDC) thin films of thickness control with single molecule accuracy. For this, we exploit the novel method solution atomic layer deposition (sALD). The sALD growth rate has been determined at 4.5 Å per cycle. The compact and dense SURMOF films grown at room temperature by sALD possess a vastly superior film thickness uniformity than those deposited by conventional solution-based techniques, such as dipping and spraying while featuring clear crystallinity from 100 nm thickness. The highly controlled layer-by-layer growth mechanism of sALD proves crucial to prevent unwanted side reactions such as Ostwald ripening or detrimental island growth, ensuring continuous Cu-BDC film coverage. This successful demonstration of sALD-grown compact continuous Cu-BDC SURMOF films is a paradigm change and provides a key advancement enabling a multitude of applications that require continuous and ultrathin coatings while maintaining tight film thickness specifications, which were previously unattainable with conventional solution-based growth methods.
Identifiants
pubmed: 36439317
doi: 10.1021/acs.chemmater.2c01102
pmc: PMC9686130
doi:
Types de publication
Journal Article
Langues
eng
Pagination
9836-9843Informations de copyright
© 2022 The Authors. Published by American Chemical Society.
Déclaration de conflit d'intérêts
The authors declare no competing financial interest.
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