Approaching strain limit of two-dimensional MoS

2D materials Chalcogenide substitution Controllable strain Lattice inheritance Strain engineering

Journal

Science bulletin
ISSN: 2095-9281
Titre abrégé: Sci Bull (Beijing)
Pays: Netherlands
ID NLM: 101655530

Informations de publication

Date de publication:
Jan 2022
Historique:
received: 10 03 2021
revised: 26 05 2021
accepted: 22 06 2021
entrez: 22 12 2022
pubmed: 23 12 2022
medline: 23 12 2022
Statut: ppublish

Résumé

Strain engineering is a promising method for tuning the electronic properties of two-dimensional (2D) materials, which are capable of sustaining enormous strain thanks to their atomic thinness. However, applying a large and homogeneous strain on these 2D materials, including the typical semiconductor MoS

Identifiants

DOI: 10.1016/j.scib.2021.07.010 PMID: 36545958
pubmed: 36545958
pii: S2095-9273(21)00479-5
doi: 10.1016/j.scib.2021.07.010
pii:
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

45-53

Informations de copyright

Copyright © 2021 Science China Press. Published by Elsevier B.V. All rights reserved.

Déclaration de conflit d'intérêts

Conflict of interest The authors declare that they have no conflict of interest.

Auteurs

Kailang Liu (K)

State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.

Xiang Chen (X)

Nano and Heterogeneous Materials Center, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.

Penglai Gong (P)

Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China.

Ruohan Yu (R)

State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Nanostructure Research Center, Wuhan University of Technology, Wuhan 430070, China.

Jinsong Wu (J)

State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Nanostructure Research Center, Wuhan University of Technology, Wuhan 430070, China.

Liang Li (L)

Institutes of Physical Science and Information Technology, Anhui University, Hefei 231699, China.

Wei Han (W)

State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.

Sanjun Yang (S)

State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.

Chendong Zhang (C)

School of Physics and Technology, Wuhan University, Wuhan 430072, China.

Jinghao Deng (J)

School of Physics and Technology, Wuhan University, Wuhan 430072, China.

Aoju Li (A)

State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.

Qingfu Zhang (Q)

State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.

Fuwei Zhuge (F)

State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.

Tianyou Zhai (T)

State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China. Electronic address: zhaity@hust.edu.cn.

Classifications MeSH