Study of the Interfacial Oxidation of InP Quantum Dots Synthesized from Tris(dimethylamino)phosphine.

Cd-free indium phosphide oxidation defect quantum dot quantum light-emitting diode

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
11 Jan 2023
Historique:
pubmed: 28 12 2022
medline: 28 12 2022
entrez: 27 12 2022
Statut: ppublish

Résumé

InP quantum dots (QDs) are the most competitive in terms of environmentally friendly QDs. However, the synthesis of InP QDs requires breakthroughs in low-cost and safe phosphorus precursors such as tri(dimethylamino)phosphine [(DMA)

Identifiants

DOI: 10.1021/acsami.2c20138 PMID: 36574641
pubmed: 36574641
doi: 10.1021/acsami.2c20138
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

1619-1628

Auteurs

Xijian Duan (X)

Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen518055, People's Republic of China.
Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen518055, People's Republic of China.
Key Laboratory of Energy Conversion and Storage Technologies, Ministry of Education, Southern University of Science and Technology, Shenzhen518055, People's Republic of China.

Jingrui Ma (J)

Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen518055, People's Republic of China.
Key Laboratory of Energy Conversion and Storage Technologies, Ministry of Education, Southern University of Science and Technology, Shenzhen518055, People's Republic of China.

Wenda Zhang (W)

Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen518055, People's Republic of China.
Hainan Provincial Key Laboratory of Fine Chemicals, Hainan University, Haikou570228, People's Republic of China.

Pai Liu (P)

Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen518055, People's Republic of China.
Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen518055, People's Republic of China.
Key Laboratory of Energy Conversion and Storage Technologies, Ministry of Education, Southern University of Science and Technology, Shenzhen518055, People's Republic of China.
ORCID: 0000-0002-7877-153X

Haochen Liu (H)

Department of Materials Science and Engineering, and Centre for Functional Photonics (CFP), City University of Hong Kong, Hong Kong SAR999077, People's Republic of China.

Junjie Hao (J)

Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen518055, People's Republic of China.
Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen518055, People's Republic of China.
Key Laboratory of Energy Conversion and Storage Technologies, Ministry of Education, Southern University of Science and Technology, Shenzhen518055, People's Republic of China.
ORCID: 0000-0002-1345-8761

Kai Wang (K)

Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen518055, People's Republic of China.
Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen518055, People's Republic of China.
Key Laboratory of Energy Conversion and Storage Technologies, Ministry of Education, Southern University of Science and Technology, Shenzhen518055, People's Republic of China.
ORCID: 0000-0003-0443-6955

Lars Samuelson (L)

Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen518055, People's Republic of China.
Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen518055, People's Republic of China.
Solid State Physics and NanoLund, Lund University, Lund22100, Sweden.
ORCID: 0000-0003-1971-9894

Xiao Wei Sun (XW)

Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen518055, People's Republic of China.
Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen518055, People's Republic of China.
Key Laboratory of Energy Conversion and Storage Technologies, Ministry of Education, Southern University of Science and Technology, Shenzhen518055, People's Republic of China.
ORCID: 0000-0002-2840-1880

Classifications MeSH